PB600BA - аналоги, даташиты, параметры транзистора

PB600BA Datasheet (PDF)

..1. Size:407K unikc
pb600ba.pdf pdf_icon

PB600BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = 10V30V 9APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTA = 25 C9IDContinuous Drain Current2TA= 70 C7.2AIDM27Pulsed Drain Current

8.1. Size:351K niko-sem
pb600bx.pdf pdf_icon

PB600BX N-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 12m 10A GFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applicatio

9.1. Size:689K infineon
ipb600n25n3g ipp600n25n3g ipi600n25n3g ipp600n25n3g ipb600n25n3g ipi600n25n3g.pdf pdf_icon

IPB600N25N3 G IPP600N25N3 GIPI600N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application

9.2. Size:258K inchange semiconductor
ipb600n25n3g.pdf pdf_icon

Isc N-Channel MOSFET Transistor IPB600N25N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Другие MOSFET... PK600BA , PK608BA , PK608DY , PB544DU , PB544JU , PB554DY , PB555BA , PB560DZ , 12N60 , PB606BA , PE504BA , PE506BA , PE507BA , PE521BA , PE526BA , PE528BA , PE529BA .