IRF3205L Todos los transistores

 

IRF3205L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3205L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 200 W

Voltaje máximo drenador - fuente |Vds|: 55 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 110 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 146(max) nC

Tiempo de subida (tr): 101 nS

Conductancia de drenaje-sustrato (Cd): 781 pF

Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm

Paquete / Cubierta: TO262

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IRF3205L Datasheet (PDF)

 ..1. Size:280K  international rectifier
irf3205lpbf irf3205spbf.pdf

IRF3205L IRF3205L

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 ..2. Size:280K  infineon
irf3205spbf irf3205lpbf.pdf

IRF3205L IRF3205L

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 7.1. Size:379K  international rectifier
irf3205zpbf irf3205zlpbf irf3205zspbf.pdf

IRF3205L IRF3205L

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 7.2. Size:330K  international rectifier
auirf3205zstrl.pdf

IRF3205L IRF3205L

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Li

 7.3. Size:160K  international rectifier
irf3205s.pdf

IRF3205L IRF3205L

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

 7.4. Size:215K  international rectifier
irf3205pbf.pdf

IRF3205L IRF3205L

PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

 7.5. Size:92K  international rectifier
irf3205.pdf

IRF3205L IRF3205L

PD-91279EIRF3205HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 7.6. Size:181K  international rectifier
irf3205z.pdf

IRF3205L IRF3205L

PD - 94653AUTOMOTIVE MOSFETIRF3205ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 6.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 7.7. Size:97K  international rectifier
irf3205 .pdf

IRF3205L IRF3205L

PD-91279EIRF3205HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 7.8. Size:215K  infineon
irf3205pbf.pdf

IRF3205L IRF3205L

PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

 7.9. Size:379K  infineon
irf3205zpbf irf3205zspbf irf3205zlpbf.pdf

IRF3205L IRF3205L

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 7.10. Size:205K  infineon
auirf3205.pdf

IRF3205L IRF3205L

PD - 97741AUTOMOTIVE GRADEAUIRF3205FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceV(BR)DSS55Vl Dynamic dV/dT RatingRDS(on) max.8.0ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)110Al Fully Avalanche RatedSID (Package Limited)75Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Complian

 7.11. Size:303K  infineon
irf3205z irf3205zs irf3205zl.pdf

IRF3205L IRF3205L

PD - 94653BIRF3205ZAUTOMOTIVE MOSFETIRF3205ZSIRF3205ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOS

 7.12. Size:707K  infineon
auirf3205z auirf3205zs.pdf

IRF3205L IRF3205L

AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *

 7.13. Size:596K  nell
irf3205a irf3205h.pdf

IRF3205L IRF3205L

RoHS IRF3205 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(110A, 55Volts)DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capabilityDDof 110A, fast switching speed, low on-stateresistance, breakdown voltage rating of 55V,and max. threshold voltage of 4 volts. They are designed as an extremely efficient

 7.14. Size:450K  first silicon
irf3205.pdf

IRF3205L IRF3205L

SEMICONDUCTORIRF3205TECHNICAL DATAN-Channel Power MOSFET (55V/120A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Parameter Symbol Rating Unit 1.Gate

 7.15. Size:258K  inchange semiconductor
irf3205zs.pdf

IRF3205L IRF3205L

Isc N-Channel MOSFET Transistor IRF3205ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 7.16. Size:206K  inchange semiconductor
irf3205strlpbf.pdf

IRF3205L IRF3205L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205STRLPBFDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMU

 7.17. Size:206K  inchange semiconductor
irf3205s.pdf

IRF3205L IRF3205L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205SDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATI

 7.18. Size:246K  inchange semiconductor
irf3205.pdf

IRF3205L IRF3205L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205IIRF3205FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.19. Size:246K  inchange semiconductor
irf3205z.pdf

IRF3205L IRF3205L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205ZIIRF3205ZFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , P0903BDG , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L .

 

 
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