IRF3205S Todos los transistores

 

IRF3205S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3205S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente |Vds|: 55 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 110 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 146(max) nC

Tiempo de elevación (tr): 101 nS

Conductancia de drenaje-sustrato (Cd): 781 pF

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO263

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IRF3205S Datasheet (PDF)

..1. irf3205s.pdf Size:160K _international_rectifier

IRF3205S IRF3205S

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

..2. irf3205s.pdf Size:206K _inchange_semiconductor

IRF3205S IRF3205S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205SDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATI

0.1. irf3205lpbf irf3205spbf.pdf Size:280K _international_rectifier

IRF3205S IRF3205S

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

0.2. irf3205spbf irf3205lpbf.pdf Size:280K _infineon

IRF3205S IRF3205S

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 0.3. irf3205strlpbf.pdf Size:206K _inchange_semiconductor

IRF3205S IRF3205S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205STRLPBFDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMU

Otros transistores... IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRFB3306 , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S .

 

 
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