IRF3205S Todos los transistores

 

IRF3205S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3205S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 110 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 97.3 nC

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: D2PAK

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IRF3205S Datasheet (PDF)

1.1. irf3205lpbf irf3205spbf.pdf Size:280K _upd

IRF3205S
IRF3205S

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0mΩ G l Fully Avalanche Rated l Lead-Free ID = 110A… S Descriptiסn Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t

1.2. irf3205s.pdf Size:160K _international_rectifier

IRF3205S
IRF3205S

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance

 1.3. irf3205strlpbf.pdf Size:206K _inchange_semiconductor

IRF3205S
IRF3205S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205STRLPBF ·DESCRIPTION ·Drain Current I =110A@ T =25℃ D C ·Drain Source Voltage : V = 55V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMU

1.4. irf3205s.pdf Size:206K _inchange_semiconductor

IRF3205S
IRF3205S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205S ·DESCRIPTION ·Drain Current I =110A@ T =25℃ D C ·Drain Source Voltage : V = 55V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATI

Otros transistores... IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF460 , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S .

 

 
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