All MOSFET. IRF3205S Datasheet

 

IRF3205S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3205S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 97.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: D2PAK

IRF3205S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3205S Datasheet (PDF)

0.1. irf3205lpbf irf3205spbf.pdf Size:280K _international_rectifier

IRF3205S
IRF3205S

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

0.2. irf3205s.pdf Size:160K _international_rectifier

IRF3205S
IRF3205S

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

 0.3. irf3205spbf irf3205lpbf.pdf Size:280K _infineon

IRF3205S
IRF3205S

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

0.4. irf3205strlpbf.pdf Size:206K _inchange_semiconductor

IRF3205S
IRF3205S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205STRLPBFDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMU

 0.5. irf3205s.pdf Size:206K _inchange_semiconductor

IRF3205S
IRF3205S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205SDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATI

Datasheet: IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF460 , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S .

 

 
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