All MOSFET. IRF3205S Datasheet

 

IRF3205S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3205S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: D2PAK

IRF3205S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3205S Datasheet (PDF)

1.1. irf3205s.pdf Size:160K _international_rectifier

IRF3205S
IRF3205S

PD - 94149 IRF3205S/L HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance

3.1. irf3205_.pdf Size:97K _international_rectifier

IRF3205S
IRF3205S

PD-91279E IRF3205 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.2. irf3205.pdf Size:92K _international_rectifier

IRF3205S
IRF3205S

PD-91279E IRF3205 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.3. irf3205z.pdf Size:181K _international_rectifier

IRF3205S
IRF3205S

PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techni

3.4. irf3205.pdf Size:450K _first_silicon

IRF3205S
IRF3205S

´╗┐SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25Ôäâ) Parameter Symbol Rating Unit 1.Gate

Datasheet: IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF460 , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S .

 


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