PE618DT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PE618DTDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7m @VGS = 10VQ2 30V 39A16m @VGS = 10VQ1 30V 23APDFN 3X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSVDSDrain-Source Voltage 30 30VVGSGate-Source Voltage 20 20TC = 25 C39 23IDContinuous Drain Current3TC

Dual N-Channel Enhancement Mode PE618DTNIKO-SEM Field Effect Transistor PDFN 3x3S Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 Q2 30V 7m 392,3,4 : D15,6,7 : S2 Q1 30V 16m 238 : G2 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30 VGate-

PE618BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 10V30V 40APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20Tc = 25 C40IDContinuous Drain Current2Tc = 100 C25IDM100Pulsed Drain Current1

N-Channel Enhancement Mode PE618BA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 6m 40A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltag