IRF3315S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3315S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 94 W
Tensión drenaje-fuente (Vds): 150 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 21 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 63.3 nC
Resistencia drenaje-fuente RDS(on): 0.082 Ohm
Empaquetado / Estuche: D2PAK
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IRF3315S Datasheet (PDF)
1.1. irf3315lpbf irf3315spbf.pdf 
Size:385K _upd
PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 5
1.2. auirf3315s.pdf Size:314K _update-mosfet
PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET® Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175°C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S
1.3. irf3315sl.pdf Size:205K _international_rectifier
PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr
1.4. irf3315s.pdf Size:197K _international_rectifier
PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr
1.5. irf3315s.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3315S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
Otros transistores... IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF9640 , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 .
