IRF3315S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3315S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 94 W

Voltaje máximo drenador - fuente |Vds|: 150 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 21 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 95(max) nC

Tiempo de subida (tr): 32 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia entre drenaje y fuente RDS(on): 0.082 Ohm

Paquete / Cubierta: TO263

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IRF3315S Datasheet (PDF)

..1. Size:385K international rectifier
irf3315lpbf irf3315spbf.pdf

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

..2. Size:197K international rectifier
irf3315s.pdf

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

..3. Size:385K infineon
irf3315spbf irf3315lpbf.pdf

..4. Size:258K inchange semiconductor
irf3315s.pdf

Isc N-Channel MOSFET Transistor IRF3315SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.1. Size:314K international rectifier
auirf3315s.pdf

PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionS

0.2. Size:205K international rectifier
irf3315sl.pdf

PD - 9.1617BIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

7.1. Size:197K international rectifier
irf3315l.pdf

7.2. Size:231K international rectifier
irf3315pbf.pdf

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

7.3. Size:124K international rectifier
irf3315.pdf

PD -91623AAPPROVEDIRF3315HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescription ID = 27ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

7.4. Size:231K infineon
irf3315pbf.pdf

7.5. Size:256K inchange semiconductor
irf3315l.pdf

Isc N-Channel MOSFET Transistor IRF3315LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

7.6. Size:245K inchange semiconductor
irf3315.pdf

isc N-Channel MOSFET Transistor IRF3315IIRF3315FEATURESStatic drain-source on-resistance:RDS(on) 70mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , 2SK3568 , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 .

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