All MOSFET. IRF3315S Datasheet

 

IRF3315S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF3315S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 94 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 21 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 95(max) nC
   Rise Time (tr): 32 nS
   Drain-Source Capacitance (Cd): 300 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
   Package: TO263

 IRF3315S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3315S Datasheet (PDF)

 ..1. Size:197K  international rectifier
irf3315s.pdf

IRF3315S
IRF3315S

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 ..2. Size:385K  international rectifier
irf3315lpbf irf3315spbf.pdf

IRF3315S
IRF3315S

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

 ..3. Size:385K  infineon
irf3315spbf irf3315lpbf.pdf

IRF3315S
IRF3315S

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

 ..4. Size:258K  inchange semiconductor
irf3315s.pdf

IRF3315S
IRF3315S

Isc N-Channel MOSFET Transistor IRF3315SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.1. Size:314K  international rectifier
auirf3315s.pdf

IRF3315S
IRF3315S

PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionS

 0.2. Size:205K  international rectifier
irf3315sl.pdf

IRF3315S
IRF3315S

PD - 9.1617BIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 7.1. Size:231K  international rectifier
irf3315pbf.pdf

IRF3315S
IRF3315S

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

 7.2. Size:124K  international rectifier
irf3315.pdf

IRF3315S
IRF3315S

PD -91623AAPPROVEDIRF3315HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescription ID = 27ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

 7.3. Size:197K  international rectifier
irf3315l.pdf

IRF3315S
IRF3315S

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 7.4. Size:231K  infineon
irf3315pbf.pdf

IRF3315S
IRF3315S

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

 7.5. Size:245K  inchange semiconductor
irf3315.pdf

IRF3315S
IRF3315S

isc N-Channel MOSFET Transistor IRF3315IIRF3315FEATURESStatic drain-source on-resistance:RDS(on) 70mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)

 7.6. Size:256K  inchange semiconductor
irf3315l.pdf

IRF3315S
IRF3315S

Isc N-Channel MOSFET Transistor IRF3315LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

Datasheet: IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , MMD60R360PRH , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 .

 

 
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