APM4810K Todos los transistores

 ..1. Size:207K  anpec
 apm4810k.pdf

APM4810K N-Channel Enhancement Mode MOSFET Features Pin Description 30V/11A, RDS(ON) = 12m (typ.) @ VGS = 10V RDS(ON) =18m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOP - 8 ( 5,6,7,8 ) D D D D Applications Power Management in Notebook Computer, (4) Portable Equipment and Battery Powered

 8.1. Size:202K  anpec
 apm4812k.pdf

APM4812K N-Channel Enhancement Mode MOSFET Features Pin Description 30V/8A, RDS(ON)= 18m (typ.) @ VGS= 10V RDS(ON)= 26m (typ.) @ VGS= 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOP - 8 D D D D Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered G Systems S S S N-C

 9.1. Size:206K  anpec
 apm4820k.pdf

APM4820K N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/11A, D D RDS(ON) =12m (Typ.) @ VGS = 10V RDS(ON) =18m (Typ.) @ VGS = 4.5V S S Super High Dense Cell Design S G Reliable and Rugged SOP-8 Lead Free and Green Devices Available (5,6,7,8) D D D D (RoHS Compliant) Applications (4) G Power Management in Notebook Computer, Portable Equipmen

 9.2. Size:156K  anpec
 apm4835.pdf

APM4835 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON) = 16m (typ.) @ VGS = -10V S 1 8 D RDS(ON) = 24m (typ.) @ VGS = -4.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 Applications S S S Power Management in Notebook

 9.3. Size:218K  anpec
 apm4828k.pdf

APM4828K N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/12A, D RDS(ON) =12m (Max.) @ VGS =10V S RDS(ON) =18m (Max.) @ VGS =4.5V S S Super High Dense Cell Design G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Notebook Computer, a

 9.4. Size:176K  anpec
 apm4800.pdf

APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 30V/8A , RDS(ON)=15m (typ.) @ VGS=10V RDS(ON)=22m (typ.) @ VGS=4.5V S 1 8 D Super High Dense Cell Design for Extremely S 2 7 D Low RDS(ON) S 3 6 D Reliable and Rugged G 45 D SO-8 Package Top View D Applications Power Manageme

 9.5. Size:185K  anpec
 apm4826k.pdf

APM4826K N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/11A, D D RDS(ON) =9.5m (Typ.) @ VGS = 10V RDS(ON) =13.5m (Typ.) @ VGS = 4.5V S S Super High Dense Cell Design S G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer

 9.6. Size:155K  anpec
 apm4804k.pdf

APM4804K N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/8A, D D D RDS(ON) = 17m (typ.) @ VGS = 10V RDS(ON) = 22m (typ.) @ VGS = 4.5V S S Super High Density Cell Design S G Reliable and Rugged SOP - 8 SOP-8 Package D D D D Lead Free Available (RoHS Compliant) Appl

 9.7. Size:835K  cn vbsemi
 apm4828kc-trl.pdf

APM4828KC-TRL www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc