APM7313K Todos los transistores

APM7313K Dual N-Channel Enhancement Mode MOSFET Pin Description Features 30V/6A, RDS(ON) =21m (typ.) @ VGS = 10V RDS(ON) =27m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, (2) (4) Portable Equipment and Battery P

APM7318 Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A , RDS(ON)=15m (typ.) @ VGS=4.5V SO-8 RDS(ON)=30m (typ.) @ VGS=2.5V S1 1 8 D1 Super High Dense Cell Design for Extremely G1 2 7 D1 Low RDS(ON) S2 3 6 D2 Reliable and Rugged G2 45 D2 SO-8 Package Top View D1 D1 D2 D2 Applica

APM7314K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 RDS(ON) =18m (typ.) @ VGS = 10V D2 RDS(ON) =23m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1

APM7318K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 20V/8A, D1 D2 RDS(ON) =15m (typ.) @ VGS =4.5V D2 RDS(ON) =30m (typ.) @ VGS =2.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)

APM7316 Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=25m (typ.) @ VGS=4.5V S1 1 8 D1 RDS(ON)=40m (typ.) @ VGS=2.5V G1 2 7 D1 Super High Dense Cell Design for Extremely S2 3 6 D2 G2 4 5 D2 Low RDS(ON) Reliable and Rugged SO-8 SO-8 Package D1 D1 D2 D2 Applications G1

APM7318KC www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5