APM9922K Todos los transistores

 ..1. Size:128K  anpec
 apm9922k.pdf

APM9922K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Portable Equipment and B

 8.1. Size:165K  anpec
 apm9926c.pdf

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

 8.2. Size:319K  anpec
 apm9928k.pdf

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS

 8.3. Size:203K  anpec
 apm9926ak.pdf

APM9926AK Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Portable Equipment and Battery Powered Systems (2) (4) G1

 8.4. Size:212K  anpec
 apm9926ccg.pdf

APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 8 20V/5A , RDS(ON)=25m (typ.) @ VGS=4.5V 7 6 5 RDS(ON)=34m (typ.) @ VGS=2.5V 1 2 Super High Dense Cell Design 3 4 Reliable and Rugged Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Por- table Equipment and Battery Powe

 8.5. Size:204K  anpec
 apm9926k.pdf

APM9926K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS = 4.5V RDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in Notebook Computer, G1 G2 Portable Equipment and

 8.6. Size:180K  anpec
 apm9926.pdf

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

 8.7. Size:338K  anpec
 apm9928.pdf

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS