APM9922K - параметры транзистора MOSFET, его аналоги, datasheet

APM9922K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: APM9922K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: SOP8

Аналог (замена) для APM9922K

APM9922K Datasheet (PDF)

..1. Size:128K anpec
apm9922k.pdf

APM9922KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A, RDS(ON) =28m(typ.) @ VGS =4.5V RDS(ON) =34m(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Notebook Computer, Portable Equipment and B

8.1. Size:165K anpec
apm9926c.pdf

APM9926/CN-Channel Enhancement Mode MOSFETFeatures Applications 20V/6A , RDS(ON)=28m(typ.) @ VGS=4.5V Power Management in Notebook Computer ,RDS(ON)=38m(typ.) @ VGS=2.5V Portable Equipment and Battery PoweredSystems. Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

8.2. Size:319K anpec
apm9928k.pdf

APM9928Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel5 & , 20V/5A , RDS(ON)=35m(typ.) @ VGS=4.5V/ % , RDS(ON)=50m(typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel-20V/-3.2A , RDS(ON)=80m(typ.) @ VGS=-4.5VSO-8RDS(ON)=120m(typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely LowD1 D1 S2RDS

8.3. Size:203K anpec
apm9926ak.pdf

APM9926AKDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS =4.5VRDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Portable Equipment andBattery Powered Systems (2) (4)G1

8.4. Size:212K anpec
apm9926ccg.pdf

APM9926CCGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description8 20V/5A , RDS(ON)=25m(typ.) @ VGS=4.5V765 RDS(ON)=34m(typ.) @ VGS=2.5V12 Super High Dense Cell Design34 Reliable and Rugged Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Notebook Computer, Por-table Equipment and Battery Powe

8.5. Size:204K anpec
apm9926k.pdf

APM9926KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS = 4.5VRDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in Notebook Computer,G1 G2Portable Equipment and

8.6. Size:180K anpec
apm9926.pdf