IRF3710S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3710S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 640 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO263
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IRF3710S datasheet
..1. Size:291K international rectifier
irf3710lpbf irf3710spbf.pdf 
PD - 95108A IRF3710SPbF IRF3710LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to
..2. Size:275K international rectifier
irf3710s irf3710l.pdf
PD - 94201B IRF3710S IRF3710L HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
..3. Size:184K international rectifier
irf3710s.pdf
PD -91310C IRF3710S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175 C Operating Temperature RDS(on) = 0.025 Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
..4. Size:258K inchange semiconductor
irf3710s.pdf
Isc N-Channel MOSFET Transistor IRF3710S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
7.1. Size:321K international rectifier
irf3710a.pdf
RoHS IRF3710 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) DESCRIPTION The Nell IRF3710 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab
7.2. Size:172K international rectifier
irf3710z.pdf
PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes th
7.3. Size:382K international rectifier
irf3710zlpbf irf3710zpbf irf3710zspbf.pdf
PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn
7.4. Size:218K international rectifier
irf3710pbf.pdf
PD - 94954D IRF3710PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m G l Fast Switching l Fully Avalanche Rated ID = 57A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre
7.5. Size:353K international rectifier
auirf3710z auirf3710zs.pdf
PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE
7.6. Size:330K international rectifier
auirf3710zstrl.pdf
PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE
7.7. Size:94K international rectifier
irf3710.pdf
PD - 91309A IRF3710 HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 23m G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
7.8. Size:382K international rectifier
irf3710zpbf irf3710zspbf irf3710zlpbf.pdf
PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn
7.9. Size:274K first silicon
irf3710.pdf
SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drain
7.10. Size:246K inchange semiconductor
irf3710z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3710Z IIRF3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
7.11. Size:258K inchange semiconductor
irf3710zs.pdf
Isc N-Channel MOSFET Transistor IRF3710ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
7.12. Size:229K inchange semiconductor
irf3710.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF3710 FEATURES Drain Current I =57A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high effciency switch mode power supplies, Power fa
7.13. Size:256K inchange semiconductor
irf3710zl.pdf
Isc N-Channel MOSFET Transistor IRF3710ZL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10
7.14. Size:256K inchange semiconductor
irf3710l.pdf
Isc N-Channel MOSFET Transistor IRF3710L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100
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