IRF3710S Todos los transistores

 

IRF3710S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3710S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente |Vds|: 100 V

Tensión compuerta-fuente |Vgs|: 10 V

Corriente continua de drenaje |Id|: 57 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 86.7 nC

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: D2PAK

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IRF3710S Datasheet (PDF)

0.1. irf3710s.pdf Size:184K _international_rectifier

IRF3710S
IRF3710S

PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

0.2. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier

IRF3710S
IRF3710S

PD - 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to

 0.3. irf3710s irf3710l.pdf Size:275K _infineon

IRF3710S
IRF3710S

PD - 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely

0.4. irf3710s.pdf Size:258K _inchange_semiconductor

IRF3710S
IRF3710S

Isc N-Channel MOSFET Transistor IRF3710SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Otros transistores... IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , 40673 , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 .

 

 
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