All MOSFET. IRF3710S Datasheet


IRF3710S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3710S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 86.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: D2PAK

IRF3710S Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF3710S Datasheet (PDF)

0.1. irf3710s.pdf Size:184K _international_rectifier


PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

0.2. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier


PD - 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to

 0.3. irf3710s.pdf Size:258K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IRF3710SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , 40673 , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 .


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