APM9946K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM9946K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOP8

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APM9946K Datasheet (PDF)

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apm9946k.pdf

APM9946KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,RDS(ON) =38m(typ.) @ VGS = 10VRDS(ON) =55m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter Systems.S1

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apm9946j.pdf

APM9946JDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/6A,RDS(ON) =38m (typ.) @ VGS = 10VRDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant)(6) (5)(8) (7)D2 D2D1 D1Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter SystemsS

8.1. Size:130K anpec
apm9948k.pdf

APM9948KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 60V/4A,DDRDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5VS Super High Dense Cell Design GS Reliable and Rugged GTop View of SOP - 8 Lead Free and Green Devices Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in DC/

8.2. Size:110K anpec
apm9945k.pdf

APM9945KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/3A, D1D1D2RDS(ON) =100m(typ.) @ VGS = 10VD2RDS(ON) =120m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8(7) (8) (5) (6)D1 D1 D2 D2App

8.3. Size:173K anpec
apm9948j.pdf

APM9948JDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 60V/4A,D2RDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5V S1G1S2 Super High Dense Cell DesignG2 Reliable and RuggedTop View of DIP-8 Lead Free and Green Devices are Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Manage

8.4. Size:1514K cn vbsemi
apm9945kc.pdf

APM9945KCwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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