APM9946KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,RDS(ON) =38m(typ.) @ VGS = 10VRDS(ON) =55m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter Systems.S1

APM9946JDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/6A,RDS(ON) =38m (typ.) @ VGS = 10VRDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant)(6) (5)(8) (7)D2 D2D1 D1Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter SystemsS

APM9948KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 60V/4A,DDRDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5VS Super High Dense Cell Design GS Reliable and Rugged GTop View of SOP - 8 Lead Free and Green Devices Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in DC/

APM9945KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/3A, D1D1D2RDS(ON) =100m(typ.) @ VGS = 10VD2RDS(ON) =120m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8(7) (8) (5) (6)D1 D1 D2 D2App

APM9948JDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 60V/4A,D2RDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5V S1G1S2 Super High Dense Cell DesignG2 Reliable and RuggedTop View of DIP-8 Lead Free and Green Devices are Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Manage

APM9945KCwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe