APM9968C Todos los transistores

 

APM9968C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM9968C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TSSOP8

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APM9968C Datasheet (PDF)

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apm9968c.pdf

APM9968C
APM9968C

APM9968CN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=16m(typ.) @ VGS=4.5V D 1 8 DS1 2 7 S2RDS(ON)=20m(typ.) @ VGS=2.5VS1 3 6 S2 Super High Dense Cell Design for Extremely G1 4 5 G2Low RDS(ON) Reliable and RuggedTSSOP-8 TSSOP-8 PackagesD DApplicationsG1 G2

 0.1. Size:142K  anpec
apm9968co.pdf

APM9968C
APM9968C

APM9968CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=20m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged TSSOP-8 PackagesTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)

 8.1. Size:144K  anpec
apm9966co.pdf

APM9968C
APM9968C

APM9966CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =20m(typ.) @ VGS =4.5V RDS(ON) =25m(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of TSSOP - 8(1) (8)D1 D2Applications(5)(4)G1 G2 P

 8.2. Size:193K  anpec
apm9966.pdf

APM9968C
APM9968C

APM9966/CDual N-Channel Enhancement Mode MOSFETFeatures Applications SOP-8 Power Management in Notebook Computer ,20V/6A , RDS(ON)=19m(typ.) @ VGS=4.5V Portable Equipment and Battery PoweredRDS(ON)=27m(typ.) @ VGS=2.5V Systems.TSSOP-820V/6A , RDS(ON)=21m(typ.) @ VGS=4.5VRDS(ON)=29m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

 8.3. Size:177K  anpec
apm9966c.pdf

APM9968C
APM9968C

APM9966/CDual N-Channel Enhancement Mode MOSFETFeatures Applications SOP-8 Power Management in Notebook Computer ,20V/6A , RDS(ON)=19m(typ.) @ VGS=4.5V Portable Equipment and Battery PoweredRDS(ON)=27m(typ.) @ VGS=2.5V Systems.TSSOP-820V/6A , RDS(ON)=21m(typ.) @ VGS=4.5VRDS(ON)=29m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

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