APM9986CO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM9986CO
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TSSOP8

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APM9986CO Datasheet (PDF)

..1. Size:204K anpec
apm9986co.pdf

APM9986CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer,(4) (5)G1 G2Portable Equipment an

8.1. Size:219K anpec
apm9988qa.pdf

APM9988QADual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,8 D1S1 1RDS(ON)= 14m(typ.) @ VGS= 4.5V7 D1G1 2RDS(ON)= 15m(typ.) @ VGS= 4VD2S2 3 6RDS(ON)= 17m(typ.) @ VGS= 3VG2 4 5 D2RDS(ON)= 19m(typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available(8) (7)

8.2. Size:206K anpec
apm9984ccg.pdf

APM9984CCGN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM(8) (7) (6) (5) Lead Free Available (RoHS Compliant)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portabl

8.3. Size:205K anpec
apm9988co.pdf

APM9988CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer, (4) (5)G1G2Portable Equipment an

8.4. Size:268K sino
apm9988qb.pdf

APM9988QBDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)=17.5m (Max.) @ VGS=4.5VG2RDS(ON)=18.5m (Max.) @ VGS=4VRDS(ON)=22m (Max.) @ VGS=3.1VS1S1RDS(ON)=27.5m (Max.) @ VGS=2.5VG1 Reliable and RuggedTop View of TDFN2x5-6 Lead Free and Green Devices Available(RoHS Compliant)D D(3) (4)G1G2Applications Power Manageme

8.5. Size:343K sino
apm9988qg.pdf

APM9988QGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)= 17.5m (Max.) @ VGS=4.5VG2RDS(ON)= 18.5m (Max.) @ VGS=4VS1RDS(ON)= 22m (Max.) @ VGS=3.1VS1G1RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell DesignTop View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Compliant)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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