All MOSFET. APM9986CO Datasheet

 

APM9986CO MOSFET. Datasheet pdf. Equivalent


   Type Designator: APM9986CO
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP8

 APM9986CO Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APM9986CO Datasheet (PDF)

 ..1. Size:204K  anpec
 apm9986co.pdf

APM9986CO APM9986CO

APM9986CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer,(4) (5)G1 G2Portable Equipment an

 8.1. Size:219K  anpec
 apm9988qa.pdf

APM9986CO APM9986CO

APM9988QADual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,8 D1S1 1RDS(ON)= 14m(typ.) @ VGS= 4.5V7 D1G1 2RDS(ON)= 15m(typ.) @ VGS= 4VD2S2 3 6RDS(ON)= 17m(typ.) @ VGS= 3VG2 4 5 D2RDS(ON)= 19m(typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available(8) (7)

 8.2. Size:206K  anpec
 apm9984ccg.pdf

APM9986CO APM9986CO

APM9984CCGN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM(8) (7) (6) (5) Lead Free Available (RoHS Compliant)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portabl

 8.3. Size:205K  anpec
 apm9988co.pdf

APM9986CO APM9986CO

APM9988CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer, (4) (5)G1G2Portable Equipment an

 8.4. Size:268K  sino
 apm9988qb.pdf

APM9986CO APM9986CO

APM9988QBDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)=17.5m (Max.) @ VGS=4.5VG2RDS(ON)=18.5m (Max.) @ VGS=4VRDS(ON)=22m (Max.) @ VGS=3.1VS1S1RDS(ON)=27.5m (Max.) @ VGS=2.5VG1 Reliable and RuggedTop View of TDFN2x5-6 Lead Free and Green Devices Available(RoHS Compliant)D D(3) (4)G1G2Applications Power Manageme

 8.5. Size:343K  sino
 apm9988qg.pdf

APM9986CO APM9986CO

APM9988QGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)= 17.5m (Max.) @ VGS=4.5VG2RDS(ON)= 18.5m (Max.) @ VGS=4VS1RDS(ON)= 22m (Max.) @ VGS=3.1VS1G1RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell DesignTop View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Compliant)

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