2016 Datasheet. Equivalente

 ..1. Size:723K  shenzhen
 2016.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General Description Features The 2016 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 4.2 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 0.1. Size:631K  rca
 2n2016.pdf

 0.2. Size:57K  sanyo
 2sa2016 2sc5569.pdf

Ordering number ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

 0.3. Size:50K  sanyo
 2sa2016 2sc5569.pdf

Ordering number ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High

 0.4. Size:109K  renesas
 rej03g1156 hat2016rds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.5. Size:297K  diodes
 dmn2016lhab.pdf

DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on)max Low Gate Threshold Voltage TA = +25 C 15.5m @ VGS = 4.5V 7.5A Low Input Capacitance 16.5m @ VGS = 4.0V 7.3A Fast Switching Speed 20V 19m @ VGS = 3.1V 6.9A ESD Protected Gate 20m @ VGS = 2.5V 6.7A Totally Lead-Free & Fully

 0.6. Size:168K  diodes
 dmn2016uts.pdf

DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TSSOP-8L Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020

 0.7. Size:188K  diodes
 dmn2016lfg.pdf

DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed ESD Protected Gate 18m @ VGS = 4.5V 5.2A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V "Green" Device (Note 2) 30m

 0.8. Size:353K  onsemi
 2sa2016 2sc5569.pdf

Ordering number EN6309D 2SA2016/2SC5569 Bipolar Transistor http //onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

 0.9. Size:33K  panasonic
 2sk2016.pdf

Power F-MOS FETs 2SK2016 2SK2016 Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.315 (typ) 5.3 0.1 4.35 0.1 High-speed switching tf= 38ns(typ) 3.0 0.1 No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact rel

 0.10. Size:301K  utc
 2sa2016.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Pin Assignment Package Pa

 0.11. Size:479K  freescale
 mrf8p20161hs.pdf

Document Number MRF8P20161HS Freescale Semiconductor Rev. 0, 10/2010 Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF8P20161HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single--Carr

 0.12. Size:807K  freescale
 mrf8p20160h.pdf

Document Number MRF8P2160H Freescale Semiconductor Rev. 1, 7/2010 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8P20160HR3 Designed for CDMA base station applications with frequencies from 1880 to MRF8P20160HSR3 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Dohert

 0.13. Size:54K  sony
 scm2016.pdf

SGM2016AN GaAs N-channel Dual-Gate MES FET Description M-281 The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features Ultra-small package Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz

 0.14. Size:1556K  jiangsu
 cjs2016.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS TSSOP8 CJS2016 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP m @4.5V 15.7 6A 20 V 20 @2.5V m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Capability

 0.15. Size:1969K  jiangsu
 cjl2016.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2016 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)TYP SOT-23-6L 15.7 m @4.5V @3.8V 16.4m 6A 20 V @2.5V 20 m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Curr

 0.16. Size:21K  sanken-ele
 2sd2016.pdf

C Equivalent circuit B Darlington 2SD2016 (2k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor Application Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 A VCBO 200 V ICBO VCB=200V 10ma

 0.17. Size:389K  willsemi
 wnm2016.pdf

WNM2016 WNM2016 Http //www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m ) D 40 @ VGS=4.5V S 20 47 @ VGS=2.5V 55 @ VGS=1.8V G SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 0.18. Size:872K  willsemi
 wnm2016a.pdf

WNM2016A WNM2016A Single N-Channel, 20V, 4.7A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical R (m ) DS DS(on) 33@ V =4.5V GS 39@ V =3.1V GS 20 44@ V =2.5V GS 66@ V =1.8V GS SOT-23 Description D 3 The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate cha

 0.19. Size:99K  tysemi
 wnm2016.pdf

Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion and power swit

 0.20. Size:907K  kexin
 ktc2016.pdf

SMD Type Transistors NPN Transistors KTC2016 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features Low Collector Emitter Saturation Voltage. Complementary to KTA1036 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1. Base 2. Collector 10.00 0.20 3. Emit

 0.21. Size:993K  ncepower
 nce60np2016g.pdf

Pb Free Product http //www.ncepower.com NCE60NP2016G NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2016G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =20A DS D R

 0.22. Size:734K  slkor
 sl2016.pdf

SL2016 20V/4.7A N-Channel MOSFET Product Summary Features VDS RDS(ON) MAX ID MAX Trench Power LV MOSFET technology 47m @4.5VD2 High Power and current handing capability 20V 4.7A S1 D1 65m @2.5V Application PWM application D Load switch S D G SOT-23 top view Schematic diagram M16 Device code M16 G S Marking and pin assignment Absolute Maximum Ratings

 0.23. Size:1039K  huashuo
 hscb2016.pdf

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N- V 20 V DS ch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typ and efficiency for most of the small power switching and load switch applications. I 16 A D The HSCB2016 meet the RoHS and Green Product requirement with full function reliability

 0.24. Size:1639K  cn vbsemi
 hat2016r.pdf

HAT2016R www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box

 0.25. Size:1478K  cn vbsemi
 wnm2016-3.pdf

WNM2016-3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

 0.26. Size:1056K  cn vbsemi
 hat2016rj.pdf

 0.27. Size:210K  inchange semiconductor
 2sd2016.pdf

isc Silicon NPN Darlington Power Transistor 2SD2016 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1A, V = 4V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter, relay and