All MOSFET. 2016 Datasheet

 

2016 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2016

SMD Transistor Code: AE9TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 4.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: SOT23

2016 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2016 Datasheet (PDF)

1.1. 2n2016.pdf Size:631K _rca

2016

1.2. 2sa2016-td-e.pdf Size:224K _update

2016
2016

Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor http://onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales mini

 1.3. 2sa2016 2sc5569.pdf Size:57K _sanyo

2016
2016

Ordering number : ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales m

1.4. 2sa2016.pdf Size:50K _sanyo

2016
2016

Ordering number:ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High-speed s

 1.5. rej03g1156 hat2016rds.pdf Size:109K _renesas

2016
2016

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.6. dmn2016uts.pdf Size:168K _diodes

2016
2016

DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Outp

1.7. 2sk2016.pdf Size:33K _panasonic

2016
2016

Power F-MOS FETs 2SK2016 2SK2016 Silicon N-Channel Power F-MOS Unit : mm Features 6.5 0.1 Low ON-resistance RDS(on) : RDS(on)1= 0.315?(typ) 5.3 0.1 4.35 0.1 High-speed switching : tf= 38ns(typ) 3.0 0.1 No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact relay 4.6 0.1

1.8. 2sa2016.pdf Size:223K _utc

2016
2016

UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Pin Assignment Package Packing L

1.9. mrf8p20161hs.pdf Size:479K _freescale

2016
2016

Document Number: MRF8P20161HS Freescale Semiconductor Rev. 0, 10/2010 Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF8P20161HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single--Carrier W

1.10. mrf8p20160h.pdf Size:807K _freescale

2016
2016

Document Number: MRF8P2160H Freescale Semiconductor Rev. 1, 7/2010 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8P20160HR3 Designed for CDMA base station applications with frequencies from 1880 to MRF8P20160HSR3 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Sin

1.11. scm2016.pdf Size:54K _sony

2016
2016

SGM2016AN GaAs N-channel Dual-Gate MES FET Description M-281 The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features Ultra-small package Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz High gain G

1.12. 2sd2016.pdf Size:21K _sanken-ele

2016

C Equivalent circuit B Darlington 2SD2016 (2k?) (200?) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 A VCBO 200 V ICBO VCB=200V 10max mA VCEO

1.13. 2sd2016.pdf Size:248K _inchange_semiconductor

2016
2016

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2016 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V APPLICATIONS ·Igniter, relay and general purpose applications. ABSOLUTE

1.14. wnm2016.pdf Size:330K _willsemi

2016
2016

WNM2016 WNM2016 N-Channel, 20V, 3.2A, Power MOSFET Http://www.willsemi.com D V(BR)DSS Rds(on) 40 @ 4.5V S 20 47 @ 2.5V G 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 2 1 in DC-DC conversi

1.15. wnm2016.pdf Size:99K _tysemi

2016
2016

Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion and power swit

1.16. ktc2016.pdf Size:907K _kexin

2016
2016

SMD Type Transistors NPN Transistors KTC2016 TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● Low Collector Emitter Saturation Voltage. ● Complementary to KTA1036 1.27 ± 0.10 1.52 ± 0.10 2 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54TYP [2.54 ± 0.20 ] [2.54 ± 0.20 ] 1. Base 2. Collector 10.00 ± 0.20 3. Emit

1.17. 2016.pdf Size:723K _shenzhen-tuofeng-semi

2016
2016

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General Description Features The 2016 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 4.2 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) < 50mΩ (VGS = 4.5V) device is suitable for use as a lo

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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