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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2341 2341 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT23 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23 Battery Powered System LCD Display inverter Power Manage

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2341 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 0.26 MAX. (VGS = 10 V, ID =

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2341 P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS VDS (V) rDS(on) (W) ID (A)b APPLICATIONS 0.072 @ VGS = -10 V -2.8 D Load Switch -30 30 D PA Switch 0.120 @ VGS = - 4.5 V -2.0 TO-236 (SOT-23) G 1 3 D Ordering Information Si2341 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

Si2341DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)b Definition 0.072 at VGS = - 10 V - 2.8 TrenchFET Power MOSFETS - 30 Compliant to RoHS Directive 2002/95/EC 0.120 at VGS = - 4.5 V - 2.0 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 T

WPM2341 WPM2341 P-Channel Enhancement Mode Mosfet Http //www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

WPM2341A WPM2341A P-Channel Enhancement Mode Mosfet Http //www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ( )ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power

AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55m @VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85m @VGS=-1.8V These devices are particularly suited for l

SSF2341E Main Product Characteristics VDSS -20V RDS(on) 37m (typ.) ID -4A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

SEMICONDUCTOR FTK2341E TECHNICAL DATA DESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES VDS = -20V,ID =-4A Schematic diagram RDS(ON)

SMD Type MOSFET P-Channel Enhancement MOSFET SI2341DS (KI2341DS) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 Features -0.1 3 VDS (V) =-30V ID =-2.8A (VGS =-10V) RDS(ON) 72m (VGS =-10V) 1 2 RDS(ON) 120m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Param

SMD Type IC SMD Type Transistors P-Channel 30-V (D-S) MOSFET KI2341DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features TrenchFET Power MOSFET 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Volta

P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m @VGS=-1.8V Super high density cell design for extremely These devices are particularly suited

WPM2341 P-channel Enhancement Mode Power MOSFET FEATURES PWM applications Load switch Power management MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V ID Drain current -3 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERIST

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

AS2341 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING 41 YW Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BV -20 V DSS

www.msksemi.com WPM2341-MS Semiconductor Compiance APPLICATION Load Switch for Portable Devices DC/DC Converter FEATURE TrenchFET Power MOSFET I V(BR)DSS RDS(on)MAX D 90 m @-4.5V -20 V -3 A 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN SOT-23-3L Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 DS V Gate-Sour

WPM2341A-3/TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLIC

SSF2341E www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION

ST2341S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-

HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

HM2341B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)