2341 Todos los transistores

 

2341 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2341
   Código: 412TF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET 2341

 

2341 Datasheet (PDF)

 ..1. Size:2296K  shenzhen
2341.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd23412341P-Channel Enhancement Mode MosfetFeatures Higher Efficiency Extending Battery Life Miniature SOT23 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23 Battery Powered System LCD Display inverter Power Manage

 0.1. Size:73K  1
2sk2341.pdf

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2341SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2341 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 0.26 MAX. (VGS = 10 V, ID =

 0.2. Size:144K  vishay
si2341.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., LtdSi2341P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSVDS (V) rDS(on) (W) ID (A)bAPPLICATIONS0.072 @ VGS = -10 V -2.8D Load Switch-3030D PA Switch0.120 @ VGS = - 4.5 V -2.0TO-236(SOT-23)G 13 DOrdering Information: Si2341S 2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

 0.3. Size:207K  vishay
si2341ds.pdf

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Si2341DSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)bDefinition0.072 at VGS = - 10 V - 2.8 TrenchFET Power MOSFETS - 30 Compliant to RoHS Directive 2002/95/EC0.120 at VGS = - 4.5 V - 2.0APPLICATIONS Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2T

 0.4. Size:2273K  willsemi
wpm2341.pdf

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WPM2341WPM2341P-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

 0.5. Size:2125K  willsemi
wpm2341a.pdf

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WPM2341AWPM2341AP-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

 0.6. Size:134K  analog power
am2341p.pdf

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Analog Power AM2341PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ()ID (A)for use in power management circuitry. 0.082 @ VGS = -10 V -3.2Typical applications are lower voltage -40application, power

 0.7. Size:490K  alfa-mos
afp2341.pdf

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AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55m@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85m@VGS=-1.8V These devices are particularly suited for l

 0.8. Size:535K  silikron
ssf2341e.pdf

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SSF2341E Main Product Characteristics: VDSS -20V RDS(on) 37m (typ.) ID -4A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.9. Size:596K  tysemi
wpm2341a.pdf

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Product specificationWPM2341AP-Channel Enhancement Mode MosfetFeatures Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

 0.10. Size:233K  first silicon
ftk2341e.pdf

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SEMICONDUCTORFTK2341ETECHNICAL DATADESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES VDS = -20V,ID =-4A Schematic diagram RDS(ON)

 0.11. Size:1715K  kexin
si2341ds-3.pdf

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SMD Type MOSFETP-Channel Enhancement MOSFET SI2341DS (KI2341DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-2.8A (VGS =-10V) RDS(ON) 72m (VGS =-10V)1 2+0.02 RDS(ON) 120m (VGS =-4.5V) +0.10.15 -0.020.95-0.1+0.11.9 -0.2G 13 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25

 0.12. Size:1682K  kexin
si2341ds.pdf

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SMD Type MOSFETP-Channel Enhancement MOSFET SI2341DS (KI2341DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1 Features -0.13 VDS (V) =-30V ID =-2.8A (VGS =-10V) RDS(ON) 72m (VGS =-10V)1 2 RDS(ON) 120m (VGS =-4.5V)+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Param

 0.13. Size:50K  kexin
ki2341ds.pdf

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SMD Type ICSMD Type TransistorsP-Channel 30-V (D-S) MOSFETKI2341DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesTrenchFET Power MOSFET12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -30 VGate-Source Volta

 0.14. Size:946K  globaltech semi
gsm2341.pdf

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P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m@VGS=-1.8V Super high density cell design for extremely These devices are particularly suited

 0.15. Size:674K  slkor
wpm2341.pdf

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WPM2341P-channel Enhancement Mode Power MOSFETFEATURESPWM applicationsLoad switchPower managementMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -3 APD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERIST

 0.16. Size:598K  stansontech
st2341srg.pdf

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ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

 0.17. Size:576K  stansontech
st2341a.pdf

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ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 0.18. Size:602K  stansontech
st2341s23rg.pdf

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ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

 0.19. Size:1742K  anbon
as2341.pdf

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AS2341 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: 41 YWMaximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -20 VDSS

 0.20. Size:273K  msksemi
wpm2341-ms.pdf

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www.msksemi.comWPM2341-MSSemiconductor CompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURE TrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-Sour

 0.21. Size:998K  cn tuofeng
tf2341.pdf

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2341TF2341 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.050@-4.5V-20V -4.1A30.070@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packagew412TFAPPLICATION

 0.22. Size:868K  cn vbsemi
wpm2341a-3-tr.pdf

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WPM2341A-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC

 0.23. Size:911K  cn vbsemi
ssf2341e.pdf

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SSF2341Ewww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

 0.24. Size:906K  cn vbsemi
st2341s23r.pdf

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ST2341S23Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

 0.25. Size:610K  cn hmsemi
hm2341.pdf

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HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 0.26. Size:553K  cn hmsemi
hm2341b.pdf

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HM2341B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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