All MOSFET. 2341 Datasheet

 

2341 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2341

SMD Transistor Code: 412TF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.75 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOT23

2341 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2341 Datasheet (PDF)

1.1. st2341s23rg.pdf Size:601K _upd

2341
2341

 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

1.2. st2341a.pdf Size:576K _upd

2341
2341

 ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 1.3. afp2341.pdf Size:490K _upd-mosfet

2341
2341

AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55mΩ@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85mΩ@VGS=-1.8V These devices are particularly suited for l

1.4. am2341p.pdf Size:134K _upd-mosfet

2341
2341

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) (Ω)ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power

 1.5. ki2341ds.pdf Size:50K _update_mosfet

2341
2341

SMD Type IC SMD Type Transistors P-Channel 30-V (D-S) MOSFET KI2341DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features TrenchFET Power MOSFET 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Volta

1.6. si2341.pdf Size:144K _vishay

2341
2341

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2341 P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS VDS (V) rDS(on) (W) ID (A)b APPLICATIONS 0.072 @ VGS = -10 V -2.8 D Load Switch -30 30 D PA Switch 0.120 @ VGS = - 4.5 V -2.0 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2341 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

1.7. si2341ds.pdf Size:207K _vishay

2341
2341

Si2341DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A)b Definition 0.072 at VGS = - 10 V - 2.8 TrenchFET Power MOSFETS - 30 Compliant to RoHS Directive 2002/95/EC 0.120 at VGS = - 4.5 V - 2.0 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2341

1.8. wpm2341a.pdf Size:2125K _willsemi

2341
2341

WPM2341A WPM2341A P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

1.9. wpm2341.pdf Size:2273K _willsemi

2341
2341

WPM2341 WPM2341 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

1.10. ssf2341e.pdf Size:535K _silikron

2341
2341

 SSF2341E Main Product Characteristics: VDSS -20V RDS(on) 37mΩ (typ.) ID -4A ① Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.11. wpm2341a.pdf Size:596K _tysemi

2341
2341

Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

1.12. ftk2341e.pdf Size:233K _first_silicon

2341
2341

SEMICONDUCTOR FTK2341E TECHNICAL DATA DESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4A Schematic diagram RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 54mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V ESD Rating:3000V HBM ● High Powe

1.13. si2341ds-3.pdf Size:1715K _kexin

2341
2341

SMD Type MOSFET P-Channel Enhancement MOSFET SI2341DS (KI2341DS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-30V ● ID =-2.8A (VGS =-10V) ● RDS(ON) < 72mΩ (VGS =-10V) 1 2 +0.02 ● RDS(ON) < 120mΩ (VGS =-4.5V) +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate 2. Source S 2 3. Drain ■ Absolute Maximum Ratings Ta = 25

1.14. si2341ds.pdf Size:1682K _kexin

2341
2341

SMD Type MOSFET P-Channel Enhancement MOSFET SI2341DS (KI2341DS) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 ■ Features -0.1 3 ● VDS (V) =-30V ● ID =-2.8A (VGS =-10V) ● RDS(ON) < 72mΩ (VGS =-10V) 1 2 ● RDS(ON) < 120mΩ (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Param

1.15. 2341.pdf Size:2296K _shenzhen-tuofeng-semi

2341
2341

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2341 2341 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT23 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23 Battery Powered System LCD Display inverter Power Manage

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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