4407 Todos los transistores

 

4407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4407
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET 4407

 

4407 Datasheet (PDF)

 ..1. Size:1843K  shenzhen
4407.pdf

4407
4407

Shenzhen Tuofeng Semiconductor Technology co., LTD 4407P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 13 @ VGS = -20V ,ID=-10A 20 @ VGS = -10V ,ID=-10A -30V -12A 28 @ VGS = -5V ,ID=-10A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired

 ..2. Size:2355K  cn tuofeng
4407.pdf

4407
4407

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4407P-Channel Enhancement Mode Power MOSFET SOP-8Description SD1 8The 4407 uses advanced trench technology to provide S D2 7excellent RDS(ON), low gate charge and operation with gate SD3 6G D4 5voltages as low as 4.5V. Top ViewGeneral Features Equivalent Cir cuitS VDS =

 0.1. Size:105K  sanyo
2sc4407.pdf

4407
4407

Ordering number:EN2760NPN Epitaxial Planar Silicon Transistor2SC4407VHF/UHF Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF mixers, frequency converters, localunit:mmoscillators.2059B[2SC4407]0.3Features0.15 High cutoff frequency : fT=3.0GHz typ3 High power gain : PG=12dB typ (f=0.9GHz)0~0.1 Small noise figure : NF=3.0dB

 0.2. Size:33K  sanyo
ec4407kf.pdf

4407
4407

Ordering number : ENN8397 EC4407KFN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEC4407KFApplicationsFeatures Low ON-resistance. 1.8V drive. mounting height : 0.4mm.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 1.3 A

 0.3. Size:81K  central
2n4407 2n4406.pdf

4407
4407

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.4. Size:222K  diodes
dmg4407sss.pdf

4407
4407

DMG4407SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 11m @ VGS = -20V -9.9A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device, Halogan and Antimony Free (Note 2) -30V 17m @ VGS = -6V -8.2A Qualified to AEC-

 0.5. Size:938K  mcc
mcq4407b.pdf

4407
4407

MCQ4407BFeatures Trench Power LV MOSFET Technology High Speed Switching High Density Cell Desihn for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)

 0.6. Size:623K  mcc
mcq4407.pdf

4407
4407

M C CRMicro Commercial Components Micro Commercial Components20736 Marilla Street ChatsworthCA 91311 MCQ4407Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"P -Channel Lead Free Finish/Rohs Compliant ("P"Suffix designatesRoHS Compliant. See ordering information)Enhancement Mode Epoxy meets UL 94 V-

 0.7. Size:140K  utc
utt4407.pdf

4407
4407

UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal lowgate charge with a 25V gate rating The UTC UTT4407 is universally applied in PWM or use

 0.8. Size:98K  gec plessey
itc14407.pdf

4407
4407

JULY 1996ITC14407516DPRELIMINARY DATADS4580-1.4ITC14407516DPOWERLINE N-CHANNEL IGBT CHIPFEATURES TYPICAL KEY PARAMETERS (25C)VCES 1600V n - Channel.IC(CONT) 75A Enhancement Mode.VCE(sat) 3.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10s).RATINGSSymbol Parameter Test Conditions Ma

 0.9. Size:542K  secos
ssg4407p.pdf

4407
4407

SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use

 0.10. Size:332K  aosemi
ao4407c.pdf

4407
4407

AO4407C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 0.11. Size:207K  aosemi
ao4407a.pdf

4407
4407

AO4407A30V P-Channel MOSFETGeneral Description Product SummaryThe AO4407A uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)with a 25V gate rating. This device is suitable for use as RDS(ON)

 0.12. Size:340K  aosemi
ao4407.pdf

4407
4407

AO440730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-20V) -12Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

 0.13. Size:481K  aosemi
aon4407.pdf

4407
4407

AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)

 0.14. Size:211K  ape
ap4407i.pdf

4407
4407

AP4407I-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP4407 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 0.15. Size:98K  ape
ap4407gp-hf ap4407gs-hf.pdf

4407
4407

AP4407GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, rugge

 0.16. Size:170K  ape
ap4407gm.pdf

4407
4407

AP4407GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement DD D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free SSSO-8SDDescriptionAP4407 series are from Advanced Pow

 0.17. Size:218K  ape
ap4407gp ap4407gs.pdf

4407
4407

AP4407GS/PRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design,DS TO-263(

 0.18. Size:94K  ape
ap4407i-hf.pdf

4407
4407

AP4407I-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 0.19. Size:208K  ape
ap4407gm-hf.pdf

4407
4407

AP4407GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 14mD Fast Switching ID -10.7AG RoHS Compliant SSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized d

 0.20. Size:71K  ape
ap4407s-p.pdf

4407
4407

AP4407S/PAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDLower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-26

 0.21. Size:210K  analog power
am4407p.pdf

4407
4407

Analog Power AM4407PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15-30circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11converter

 0.22. Size:117K  analog power
am4407pe.pdf

4407
4407

Analog Power AM4407PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15-30converters and power management in portable and 13 @ VGS = -4.5V -11ba

 0.23. Size:1093K  blue-rocket-elect
br4407.pdf

4407
4407

BR4407 Rev.G Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS (V) = -30V ID = -12 A (VGS = -20V) RDS(ON)

 0.24. Size:1199K  blue-rocket-elect
brcs4407sc.pdf

4407
4407

BRCS4407SC Rev.A Feb.-2022 DATA SHEET / Descriptions SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS (V) = -30V ID = -14A (VGS = 25V) RDS(ON)

 0.25. Size:372K  first silicon
ftk4407.pdf

4407
4407

SEMICONDUCTOR FTK4407TECHNICAL DATAP-Channel Power MOSFETDESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).The device is ideal for load switch and battery protection applications D D D D8 7 6 5APPLICATIONS Battery protection applications1 2 3 4S S S G Load switch MARKING Q440

 0.26. Size:1643K  kexin
ao4407a.pdf

4407
4407

SMD Type MOSFETP-Channel MOSFETAO4407A (KO4407A)SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V)1 Source 5 Drain RDS(ON) 17m (VGS =-6V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

 0.27. Size:2315K  kexin
ao4407.pdf

4407
4407

SMD Type MOSFETP-Channel MOSFETAO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

 0.28. Size:2294K  kexin
ko4407.pdf

4407
4407

SMD Type MOSFETP-Channel MOSFETKO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

 0.29. Size:475K  ait semi
am4407.pdf

4407
4407

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-7.5A, R = 19m(typ)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell des

 0.30. Size:510K  belling
blm4407.pdf

4407
4407

Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS DR

 0.31. Size:409K  elm
elm14407aa.pdf

4407
4407

Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)

 0.32. Size:625K  elm
elm34407aa.pdf

4407
4407

Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 0.33. Size:164K  m-mos
mmp4407.pdf

4407
4407

MMP4407Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-10A = 20mRDS(ON), Vgs@-4.5V, Ids@-7A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and

 0.34. Size:526K  silicon standard
ssm4407gm.pdf

4407
4407

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

 0.35. Size:952K  slkor
sl4407a.pdf

4407
4407

SL4407AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID-12A RDS(ON)( at VGS=-20V)11mohm R ( at V =-10V)DS(ON) GS13mohm RDS(ON)( at VGS=-6V)17mohm R ( at V =-4.5V)DS(ON) GS27mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Spee

 0.36. Size:821K  stansontech
stp4407a.pdf

4407
4407

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 0.37. Size:579K  stansontech
stp4407.pdf

4407
4407

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 0.38. Size:1297K  allpower
br4407.pdf

4407
4407

AIIP ERDATA SHEET BR4407 P-Channel p werMOSFETl DescriptinsSOP-8 P MOS P-Channel Enhancement Mode Field Effect Transist r in a SOP-8 Plastic Package.l Features Vos (V) = -30V = A l -12 (VGs = -20V) omRos(ON)

 0.39. Size:841K  huashuo
hsm4407.pdf

4407
4407

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

 0.40. Size:551K  cn puolop
pt4407.pdf

4407
4407

PT440730V P-Channel Enhancement Mode Power MOSFET SOP-8General Features VDS = -30V,ID = -12A RDS(ON)

 0.41. Size:2170K  winsok
wsp4407.pdf

4407
4407

WSP4407 P-Ch MOSFETGeneral Description Product SummeryThe WSP4407 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 9.6m -13Afor most of the synchronous buck converter applications . Applications The WSP4407 meet the RoHS and Green Product requirement , 100% EAS guaranteed

 0.42. Size:2520K  winsok
wsp4407a.pdf

4407
4407

WSP4407AP-Ch MOSFETGeneral Description Product SummeryThe WSP4407A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 12m -11Agate charge for most of the synchronous buck converter applications . Applications The WSP4407A meet the RoHS and Green Product requirement , 100% EAS guaranteed

 0.43. Size:830K  cn vbsemi
ao4407a.pdf

4407
4407

AO4407Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

 0.44. Size:443K  cn vbsemi
vbza4407.pdf

4407
4407

VBZA4407www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.018 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

 0.45. Size:547K  cn hmsemi
hm4407.pdf

4407
4407

HM4407P-Channel Enhancement Mode Power MOSFET DDescription The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 0.46. Size:572K  cn hmsemi
hm4407a.pdf

4407
4407

HM4407AP-Channel Enhancement Mode Power MOSFET DDescription The HM4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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