4407 Datasheet. Equivalente

 ..1. Size:1843K  shenzhen
 4407.pdf

Shenzhen Tuofeng Semiconductor Technology co., LTD 4407 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 13 @ VGS = -20V ,ID=-10A 20 @ VGS = -10V ,ID=-10A -30V -12A 28 @ VGS = -5V ,ID=-10A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired

 ..2. Size:2355K  cn tuofeng
 4407.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4407 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The 4407 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View General Features Equivalent Cir cuit S VDS =

 0.1. Size:105K  sanyo
 2sc4407.pdf

Ordering number EN2760 NPN Epitaxial Planar Silicon Transistor 2SC4407 VHF/UHF Mixer, Local Oscillator Applications Applications Package Dimensions VHF/UHF mixers, frequency converters, local unit mm oscillators. 2059B [2SC4407] 0.3 Features 0.15 High cutoff frequency fT=3.0GHz typ 3 High power gain PG=12dB typ (f=0.9GHz) 0 0.1 Small noise figure NF=3.0dB

 0.2. Size:33K  sanyo
 ec4407kf.pdf

Ordering number ENN8397 EC4407KF N-Channel Silicon MOSFET General-Purpose Switching Device EC4407KF Applications Features Low ON-resistance. 1.8V drive. mounting height 0.4mm. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 1.3 A

 0.3. Size:81K  central
 2n4407 2n4406.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 0.4. Size:222K  diodes
 dmg4407sss.pdf

DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 11m @ VGS = -20V -9.9A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device, Halogan and Antimony Free (Note 2) -30V 17m @ VGS = -6V -8.2A Qualified to AEC-

 0.5. Size:938K  mcc
 mcq4407b.pdf

MCQ4407B Features Trench Power LV MOSFET Technology High Speed Switching High Density Cell Desihn for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)

 0.6. Size:623K  mcc
 mcq4407.pdf

M C C R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 MCQ4407 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" P -Channel Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Enhancement Mode Epoxy meets UL 94 V-

 0.7. Size:140K  utc
 utt4407.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 25V gate rating The UTC UTT4407 is universally applied in PWM or use

 0.8. Size:98K  gec plessey
 itc14407.pdf

JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25 C) VCES 1600V n - Channel. IC(CONT) 75A Enhancement Mode. VCE(sat) 3.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10 s). RATINGS Symbol Parameter Test Conditions Ma

 0.9. Size:542K  secos
 ssg4407p.pdf

SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures B minimal power loss and conserves energy, making this device ideal for use

 0.10. Size:332K  aosemi
 ao4407c.pdf

AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 0.11. Size:207K  aosemi
 ao4407a.pdf

AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON)

 0.12. Size:340K  aosemi
 ao4407.pdf

AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

 0.13. Size:481K  aosemi
 aon4407.pdf

AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is suitable RDS(ON)

 0.14. Size:211K  ape
 ap4407i.pdf

AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP4407 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 0.15. Size:98K  ape
 ap4407gp-hf ap4407gs-hf.pdf

AP4407GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 0.16. Size:170K  ape
 ap4407gm.pdf

AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement D D D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free S S SO-8 S D Description AP4407 series are from Advanced Pow

 0.17. Size:218K  ape
 ap4407gp ap4407gs.pdf

AP4407GS/P RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(

 0.18. Size:94K  ape
 ap4407i-hf.pdf

AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 0.19. Size:208K  ape
 ap4407gm-hf.pdf

AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 14m D Fast Switching ID -10.7A G RoHS Compliant S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized d

 0.20. Size:71K  ape
 ap4407s-p.pdf

AP4407S/P Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-26

 0.21. Size:210K  analog power
 am4407p.pdf

Analog Power AM4407P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15 -30 circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11 converter

 0.22. Size:117K  analog power
 am4407pe.pdf

Analog Power AM4407PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15 -30 converters and power management in portable and 13 @ VGS = -4.5V -11 ba

 0.23. Size:1093K  blue-rocket-elect
 br4407.pdf

 0.24. Size:1199K  blue-rocket-elect
 brcs4407sc.pdf

 0.25. Size:372K  first silicon
 ftk4407.pdf

SEMICONDUCTOR FTK4407 TECHNICAL DATA P-Channel Power MOSFET DESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). The device is ideal for load switch and battery protection applications D D D D 8 7 6 5 APPLICATIONS Battery protection applications 1 2 3 4 S S S G Load switch MARKING Q440

 0.26. Size:1643K  kexin
 ao4407a.pdf

SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V) 1 Source 5 Drain RDS(ON) 17m (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 0.27. Size:2315K  kexin
 ao4407.pdf

SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

 0.28. Size:2294K  kexin
 ko4407.pdf

SMD Type MOSFET P-Channel MOSFET KO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

 0.29. Size:475K  ait semi
 am4407.pdf

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m (typ)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-7.5A, R = 19m (typ)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell des

 0.30. Size:510K  belling
 blm4407.pdf

Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS D R

 0.31. Size:409K  elm
 elm14407aa.pdf

Single P-channel MOSFET ELM14407AA-N General description Features ELM14407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V) resistance. Rds(on)

 0.32. Size:625K  elm
 elm34407aa.pdf

Single P-channel MOSFET ELM34407AA-N General description Features ELM34407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 0.33. Size:164K  m-mos
 mmp4407.pdf

MMP4407 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10A = 20m RDS(ON), Vgs@-4.5V, Ids@-7A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and

 0.34. Size:526K  silicon standard
 ssm4407gm.pdf

SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4407GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 14m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -10.7A D The SSM4407GM is supplied in a RoHS-compliant Pb-free; RoHS

 0.35. Size:952K  slkor
 sl4407a.pdf

SL4407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I D -12A R DS(ON)( at VGS=-20V) 11mohm R ( at V =-10V) DS(ON) GS 13mohm RDS(ON)( at VGS=-6V) 17mohm R ( at V =-4.5V) DS(ON) GS 27mohm General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Spee

 0.36. Size:821K  stansontech
 stp4407a.pdf

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 0.37. Size:579K  stansontech
 stp4407.pdf

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 0.38. Size:993K  allpower
 ap4407c.pdf

 0.39. Size:1297K  allpower
 br4407.pdf

AIIP ER DATA SHEET BR4407 P-Channel p werMOSFET l Descripti ns SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transist r in a SOP-8 Plastic Package. l Features Vos (V) = -30V = A l -12 (VGs = -20V) o m Ros(ON)

 0.40. Size:2514K  allpower
 ap4407.pdf

 0.41. Size:841K  huashuo
 hsm4407.pdf

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

 0.42. Size:410K  jiejie micro
 jmtp4407b.pdf

JMTP4407B Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -11A PWM Applications DS D R

 0.43. Size:1120K  jiejie micro
 jmtp4407a.pdf

JMTP4407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -12A Load Switch RDS(ON)

 0.44. Size:528K  jiejie micro
 jmtq4407a.pdf

JMTQ4407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -35A Load Switch RDS(ON)

 0.45. Size:551K  cn puolop
 pt4407.pdf

PT4407 30V P-Channel Enhancement Mode Power MOSFET SOP-8 General Features VDS = -30V,ID = -12A RDS(ON)

 0.46. Size:2170K  winsok
 wsp4407.pdf

WSP4407 P-Ch MOSFET General Description Product Summery The WSP4407 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 9.6m -13A for most of the synchronous buck converter applications . Applications The WSP4407 meet the RoHS and Green Product requirement , 100% EAS guaranteed

 0.47. Size:2520K  winsok
 wsp4407a.pdf

WSP4407A P-Ch MOSFET General Description Product Summery The WSP4407A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 12m -11A gate charge for most of the synchronous buck converter applications . Applications The WSP4407A meet the RoHS and Green Product requirement , 100% EAS guaranteed

 0.48. Size:830K  cn vbsemi
 ao4407a.pdf

AO4407A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 0.49. Size:443K  cn vbsemi
 vbza4407.pdf

VBZA4407 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.018 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 0.50. Size:547K  cn hmsemi
 hm4407.pdf

HM4407 P-Channel Enhancement Mode Power MOSFET D Description The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 0.51. Size:572K  cn hmsemi
 hm4407a.pdf

HM4407A P-Channel Enhancement Mode Power MOSFET D Description The HM4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 0.52. Size:730K  cn appliedpower
 cm4407.pdf

CM4407 P-Channel 30V (D-S) Power MOSFET Description Applications The CM4407 is the P-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech- Personal Digital Assistants nology. This high density process and design have been Portable Instrumentation optimized switching performance and especially

 0.53. Size:2126K  cn apm
 ap4407a.pdf

AP4407A 30V P-Channel Enhancement Mode MOSFET Description The AP4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = -12A RDS(ON)

 0.54. Size:1385K  cn apm
 ap4407b.pdf

AP4407B 30V P-Channel Enhancement Mode MOSFET Description The AP4407B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-11.3A DS D R