4407 Specs and Replacement
Type Designator: 4407
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
4407 substitution
- MOSFET ⓘ Cross-Reference Search
4407 datasheet
4407.pdf
Shenzhen Tuofeng Semiconductor Technology co., LTD 4407 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 13 @ VGS = -20V ,ID=-10A 20 @ VGS = -10V ,ID=-10A -30V -12A 28 @ VGS = -5V ,ID=-10A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired ... See More ⇒
4407.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4407 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The 4407 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View General Features Equivalent Cir cuit S VDS = ... See More ⇒
2sc4407.pdf
Ordering number EN2760 NPN Epitaxial Planar Silicon Transistor 2SC4407 VHF/UHF Mixer, Local Oscillator Applications Applications Package Dimensions VHF/UHF mixers, frequency converters, local unit mm oscillators. 2059B [2SC4407] 0.3 Features 0.15 High cutoff frequency fT=3.0GHz typ 3 High power gain PG=12dB typ (f=0.9GHz) 0 0.1 Small noise figure NF=3.0dB... See More ⇒
ec4407kf.pdf
Ordering number ENN8397 EC4407KF N-Channel Silicon MOSFET General-Purpose Switching Device EC4407KF Applications Features Low ON-resistance. 1.8V drive. mounting height 0.4mm. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 1.3 A ... See More ⇒
2n4407 2n4406.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
dmg4407sss.pdf
DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 11m @ VGS = -20V -9.9A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device, Halogan and Antimony Free (Note 2) -30V 17m @ VGS = -6V -8.2A Qualified to AEC-... See More ⇒
mcq4407b.pdf
MCQ4407B Features Trench Power LV MOSFET Technology High Speed Switching High Density Cell Desihn for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) ... See More ⇒
mcq4407.pdf
M C C R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 MCQ4407 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" P -Channel Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Enhancement Mode Epoxy meets UL 94 V-... See More ⇒
utt4407.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 25V gate rating The UTC UTT4407 is universally applied in PWM or use... See More ⇒
itc14407.pdf
JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25 C) VCES 1600V n - Channel. IC(CONT) 75A Enhancement Mode. VCE(sat) 3.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10 s). RATINGS Symbol Parameter Test Conditions Ma... See More ⇒
ssg4407p.pdf
SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures B minimal power loss and conserves energy, making this device ideal for use ... See More ⇒
ao4407c.pdf
AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
ao4407a.pdf
AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON) ... See More ⇒
ao4407.pdf
AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V) ... See More ⇒
aon4407.pdf
AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is suitable RDS(ON) ... See More ⇒
ap4407i.pdf
AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP4407 series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒
ap4407gp-hf ap4407gs-hf.pdf
AP4407GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
ap4407gm.pdf
AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement D D D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free S S SO-8 S D Description AP4407 series are from Advanced Pow... See More ⇒
ap4407gp ap4407gs.pdf
AP4407GS/P RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(... See More ⇒
ap4407i-hf.pdf
AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒
ap4407gm-hf.pdf
AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 14m D Fast Switching ID -10.7A G RoHS Compliant S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized d... See More ⇒
ap4407s-p.pdf
AP4407S/P Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-26... See More ⇒
am4407p.pdf
Analog Power AM4407P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15 -30 circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11 converter... See More ⇒
am4407pe.pdf
Analog Power AM4407PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15 -30 converters and power management in portable and 13 @ VGS = -4.5V -11 ba... See More ⇒
ftk4407.pdf
SEMICONDUCTOR FTK4407 TECHNICAL DATA P-Channel Power MOSFET DESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). The device is ideal for load switch and battery protection applications D D D D 8 7 6 5 APPLICATIONS Battery protection applications 1 2 3 4 S S S G Load switch MARKING Q440... See More ⇒
ao4407a.pdf
SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V) 1 Source 5 Drain RDS(ON) 17m (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr... See More ⇒
ao4407.pdf
SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai... See More ⇒
ko4407.pdf
SMD Type MOSFET P-Channel MOSFET KO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai... See More ⇒
am4407.pdf
AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m (typ)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-7.5A, R = 19m (typ)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell des... See More ⇒
blm4407.pdf
Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS D R ... See More ⇒
elm14407aa.pdf
Single P-channel MOSFET ELM14407AA-N General description Features ELM14407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V) resistance. Rds(on) ... See More ⇒
elm34407aa.pdf
Single P-channel MOSFET ELM34407AA-N General description Features ELM34407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on) ... See More ⇒
mmp4407.pdf
MMP4407 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10A = 20m RDS(ON), Vgs@-4.5V, Ids@-7A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and... See More ⇒
ssm4407gm.pdf
SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4407GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 14m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -10.7A D The SSM4407GM is supplied in a RoHS-compliant Pb-free; RoHS... See More ⇒
sl4407a.pdf
SL4407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I D -12A R DS(ON)( at VGS=-20V) 11mohm R ( at V =-10V) DS(ON) GS 13mohm RDS(ON)( at VGS=-6V) 17mohm R ( at V =-4.5V) DS(ON) GS 27mohm General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Spee... See More ⇒
stp4407a.pdf
STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒
stp4407.pdf
STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no... See More ⇒
br4407.pdf
AIIP ER DATA SHEET BR4407 P-Channel p werMOSFET l Descripti ns SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transist r in a SOP-8 Plastic Package. l Features Vos (V) = -30V = A l -12 (VGs = -20V) o m Ros(ON) ... See More ⇒
hsm4407.pdf
HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio... See More ⇒
jmtp4407b.pdf
JMTP4407B Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -11A PWM Applications DS D R ... See More ⇒
jmtp4407a.pdf
JMTP4407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -12A Load Switch RDS(ON) ... See More ⇒
jmtq4407a.pdf
JMTQ4407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -35A Load Switch RDS(ON) ... See More ⇒
pt4407.pdf
PT4407 30V P-Channel Enhancement Mode Power MOSFET SOP-8 General Features VDS = -30V,ID = -12A RDS(ON) ... See More ⇒
wsp4407.pdf
WSP4407 P-Ch MOSFET General Description Product Summery The WSP4407 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 9.6m -13A for most of the synchronous buck converter applications . Applications The WSP4407 meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒
wsp4407a.pdf
WSP4407A P-Ch MOSFET General Description Product Summery The WSP4407A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 12m -11A gate charge for most of the synchronous buck converter applications . Applications The WSP4407A meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒
ao4407a.pdf
AO4407A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs ... See More ⇒
vbza4407.pdf
VBZA4407 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.018 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs... See More ⇒
hm4407.pdf
HM4407 P-Channel Enhancement Mode Power MOSFET D Description The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON) ... See More ⇒
hm4407a.pdf
HM4407A P-Channel Enhancement Mode Power MOSFET D Description The HM4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON) ... See More ⇒
ap4407a.pdf
AP4407A 30V P-Channel Enhancement Mode MOSFET Description The AP4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = -12A RDS(ON) ... See More ⇒
ap4407b.pdf
AP4407B 30V P-Channel Enhancement Mode MOSFET Description The AP4407B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-11.3A DS D R ... See More ⇒
Detailed specifications: 1481 , 2015 , 2016 , 2021 , 2026 , 2341 , 4401 , 4402 , IRF9540 , 4409 , 4410 , 4435 , 4501 , 4542 , 4606 , 4611 , 4612 .
Keywords - 4407 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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