4409 Todos los transistores

 ..1. Size:1972K  shenzhen
 4409.pdf

Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 12 @ VGS = -10V ,ID=-12A -30V -12A 15 @ VGS = -4.5 V ,ID=-10A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired Pin 1 / 2 / 3 Source P

 ..2. Size:4710K  cn tuofeng
 4409.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4409 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The 4409 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View General Features Equivalent Cir cuit S VDS =

 0.1. Size:227K  international rectifier
 auxfs4409.pdf

PD - 97793 AUTOMOTIVE GRADE AUXFS4409 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance D V(BR)DSS 300V 175 C Operating Temperature RDS(on) typ. 58m Fast Switching G max. 75m Repetitive Avalanche Allowed up to Tjmax S ID 39A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for

 0.2. Size:373K  international rectifier
 auirfp4409.pdf

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 0.3. Size:150K  toshiba
 2sc4409.pdf

2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit mm Power switching applications Low collector saturation voltage VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time t = 500ns (typ.) stg Small flat package P = 1 2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Ma

 0.4. Size:255K  vishay
 si4409dy.pdf

Si4409DY Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 1.2 at VGS = - 10 V - 1.3 TrenchFET Power MOSFET - 150 4.8 nC 100 % UIS Tested 1.3 at VGS = - 6 V - 1.2 APPLICATIONS Active Clamp Switch Isolated DC/DC Converters S SO-8 S 1 8 D

 0.5. Size:476K  infineon
 auirfp4409.pdf

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 0.6. Size:123K  onsemi
 nts4409n nvs4409n.pdf

NTS4409N, NVS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323 Features http //onsemi.com Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVS4409N 249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant 25

 0.7. Size:302K  aosemi
 ao4409.pdf

AO4409 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 0.8. Size:155K  ape
 ap4409gep.pdf

AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovat

 0.9. Size:122K  ape
 ap4409gep-hf.pdf

AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 0.10. Size:182K  ape
 ap4409agem.pdf

AP4409AGEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 0.11. Size:61K  ape
 ap4409agem-hf.pdf

AP4409AGEM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S RoHS Compliant S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch

 0.12. Size:184K  ape
 ap4409gem.pdf

AP4409GEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

 0.13. Size:99K  ape
 ap4409ageh-hf.pdf

AP4409AGEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Lower On-resistance RDS(ON) 8m G Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,

 0.14. Size:55K  ape
 ap4409agm-hf.pdf

AP4409AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D D Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP4409A series are from Advanced Power innovated design and silicon process technol

 0.15. Size:203K  analog power
 am4409p.pdf

Analog Power AM4409P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2 this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5 converte

 0.16. Size:284K  cystek
 mtp4409h8.pdf

Spec. No. C808H8 Issued Date 2013.09.02 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP4409H8 ID -15A 7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

 0.17. Size:336K  cystek
 mtp4409q8.pdf

Spec. No. C808Q8 Issued Date 2012.04.03 CYStech Electronics Corp. Revised Date 2014.05.16 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m (typ) RDSON@VGS=-4.5V, ID=-10A 11.4m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free

 0.18. Size:430K  first silicon
 ftk4409.pdf

SEMICONDUCTOR FTK4409 TECHNICAL DATA Small Signal MOSFET 25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323 Features Advance Planar Technology for Fast Switching, Low RDS(on) 3 Higher Efficiency Extending Battery Life This is a Pb-Free Device 2 1 SOT 323 Applications Boost and Buck Converter Load Switch Battery Protection V(BR)DSS RDS(on) T

 0.19. Size:1046K  kexin
 2sc4409.pdf

SMD Type Transistors NPN Transistors 2SC4409 1.70 0.1 Features Low collector saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1 2 W (Mounted on a ceramic substrate) Complementary to 2SA1681 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

 0.20. Size:1350K  kexin
 ao4409.pdf

SMD Type MOSFET P-Channel MOSFET AO4409 (KO4409) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V) 1.50 0.15 RDS(ON) 12m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gat

 0.21. Size:414K  elm
 elm14409aa.pdf

Single P-channel MOSFET ELM14409AA-N General description Features ELM14409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V) resistance. Rds(on)

 0.22. Size:249K  elm
 elm34409aa.pdf

Single P-channel MOSFET ELM34409AA-N General description Features ELM34409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

 0.23. Size:183K  silicon standard
 ssm4409gem.pdf

SSM4409GEM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D D BVDSS -35V Simple Drive Requirement D RDS(ON) 7.5m Low On-resistance G Fast Switching Characteristic ID -14.5A S S S RoHS Compliant SO-8 DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard Corp. G provide the designer with the best combination of fast switching, ruggedized devic

 0.24. Size:433K  slkor
 sl4409n.pdf

SL4409N N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 58m @4.5V 20 V 2.3A @2.5V 86m 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source

 0.25. Size:751K  allpower
 ap4409s.pdf

 0.26. Size:888K  eternal
 ey4409.pdf

Eternal Semiconductor Inc. EY4409 P-Channel Enhancement-Mode MOSFET (-30V, -14A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 10@ VGS = -10 V, ID=-14A -30V -14A 18@ VGS = -4.5V, ID=-8A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current -5V Logic Level Control Lead P

 0.27. Size:1285K  sprague
 2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf

 0.28. Size:1265K  winsok
 wsp4409a.pdf

WSP4409A P-Ch MOSFET General Description Product Summery The WSP4409A is the highest BVDSS RDSON ID performance trench P-Ch MOSFET with extreme high cell density , which provide -15A -30V 8.0m excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4409A meet the RoHS and Power Management in Notebook Computer,

 0.29. Size:1057K  winsok
 wsp4409.pdf

WSP4409 P-Ch MOSFET General Description Product Summery The WSP4409 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent -17.6A -30V 5.0m RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4409 meet the RoHS and Green Product requirement , 100% EAS Pow

 0.30. Size:1918K  cn vbsemi
 hm4409.pdf

HM4409 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S

 0.31. Size:1060K  cn vbsemi
 vbza4409.pdf

VBZA4409 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011at VGS = - 10 V - 11 100 % Rg Tested RoHS - 30 15 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

 0.32. Size:1159K  cn yangzhou yangjie elec
 yjs4409a.pdf

RoHS COMPLIANT YJS4409A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -18A D R ( at V =-20V) 5.5mohm DS(ON) GS R ( at V =-10V) 6.0mohm DS(ON) GS R ( at V =-4.5V) 10mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed swit

 0.33. Size:571K  cn hmsemi
 hm4409.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)

 0.34. Size:1552K  cn apm
 ap4409a.pdf

AP4409A -30V P-Channel Enhancement Mode MOSFET Description The AP4409A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I = 14A DS D R