Shenzhen Tuofeng Semiconductor Technology co., LTD 4409P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max12 @ VGS = -10V ,ID=-12A -30V -12A 15 @ VGS = -4.5 V ,ID=-10A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired Pin 1 / 2 / 3: Source P

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4409P-Channel Enhancement Mode Power MOSFET SOP-8Description SD1 8The 4409 uses advanced trench technology to provide S D2 7excellent RDS(ON), low gate charge and operation with gate SD3 6G D4 5voltages as low as 4.5V. Top ViewGeneral Features Equivalent Cir cuitS VDS =

PD - 97793AUTOMOTIVE GRADEAUXFS4409FeaturesHEXFET Power MOSFET Advanced Process Technology Low On-Resistance DV(BR)DSS300V 175C Operating TemperatureRDS(on) typ.58m Fast SwitchingG max. 75m Repetitive Avalanche Allowed up to TjmaxSID 39A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionSpecifically designed for

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time: t = 500ns (typ.) stg Small flat package P = 1~2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Ma

Si4409DYVishay SiliconixP-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition1.2 at VGS = - 10 V - 1.3 TrenchFET Power MOSFET- 150 4.8 nC 100 % UIS Tested 1.3 at VGS = - 6 V - 1.2APPLICATIONS Active Clamp Switch Isolated DC/DC ConvertersS SO-8S1 8 D

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

NTS4409N, NVS4409NSmall Signal MOSFET25 V, 0.75 A, Single, N-Channel,ESD Protection, SC-70/SOT-323Featureshttp://onsemi.com Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVS4409N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25

AO440930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4409 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AP4409GEP-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovat

AP4409GEP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowe

AP4409AGEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic

AP4409AGEM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSS RoHS CompliantSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switch

AP4409GEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device

AP4409AGEH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Lower On-resistance RDS(ON) 8mG Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

AP4409AGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15AGS RoHS Compliant & Halogen-FreeSSO-8 SDDescriptionAP4409A series are from Advanced Power innovated design and siliconprocess technol

Analog Power AM4409PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5converte

Spec. No. : C808H8 Issued Date : 2013.09.02 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTP4409H8ID -15A7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

Spec. No. : C808Q8 Issued Date : 2012.04.03 CYStech Electronics Corp.Revised Date : 2014.05.16 Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m(typ) RDSON@VGS=-4.5V, ID=-10A 11.4m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free

SEMICONDUCTORFTK4409TECHNICAL DATASmall Signal MOSFET25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323Features Advance Planar Technology for Fast Switching, Low RDS(on)3 Higher Efficiency Extending Battery Life This is a Pb-Free Device 21SOT 323Applications Boost and Buck Converter Load Switch Battery ProtectionV(BR)DSS RDS(on) T

SMD Type TransistorsNPN Transistors2SC44091.70 0.1 Features Low collector saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1~2 W (Mounted on a ceramic substrate) Complementary to 2SA16811.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type MOSFETP-Channel MOSFETAO4409 (KO4409)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V)1.50 0.15 RDS(ON) 12m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gat

Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)

Single P-channel MOSFETELM34409AA-NGeneral description Features ELM34409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

SL4409NN-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source

Eternal Semiconductor Inc. EY4409P-Channel Enhancement-Mode MOSFET (-30V, -14A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP 10@ VGS = -10 V, ID=-14A -30V -14A 18@ VGS = -4.5V, ID=-8AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current -5V Logic Level Control LeadP

WSP4409A P-Ch MOSFETGeneral Description Product SummeryThe WSP4409A is the highest BVDSS RDSON ID performance trench P-Ch MOSFET with extreme high cell density , which provide -15A-30V 8.0mexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4409A meet the RoHS and Power Management in Notebook Computer,

WSP4409 P-Ch MOSFETGeneral Description Product SummeryThe WSP4409 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent -17.6A-30V 5.0mRDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4409 meet the RoHS and Green Product requirement , 100% EAS Pow

HM4409www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S

VBZA4409www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011at VGS = - 10 V - 11 100 % Rg TestedRoHS- 30 15 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6

RoHS COMPLIANT YJS4409A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -18A D R ( at V =-20V) 5.5mohm DS(ON) GS R ( at V =-10V) 6.0mohm DS(ON) GS R ( at V =-4.5V) 10mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed swit

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)