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4542 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4542
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP8
 

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4542 Datasheet (PDF)

 ..1. Size:2363K  shenzhen
4542.pdf pdf_icon

4542

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/6.9A, RDS(ON)=27.44m @VGS =10VG1 2 7 D1R DS(ON)=41.16m @VGS =4.5V S2 3 6 D2G2 4 5 D2 P-ChannelR DS(ON)=32.00m @VGS =10.0V-30V/-6.9A,SO-8R DS(ON)=50.00m @VGS =4.5V Super High Dense Ce

 0.1. Size:54K  fairchild semi
si4542dy.pdf pdf_icon

4542

January 2001Si4542DY30V Complementary PowerTrenchMOSFETGeneral Description FeaturesThis complementary MOSFET device is produced using Q1: N-ChannelFairchilds advanced PowerTrench process that has6 A, 30 V RDS(on) = 28 m @ VGS = 10Vbeen especially tailored to minimize the on-stateresistance and yet maintain low gate charge forRDS(on) = 35 m @ VGS

 0.2. Size:253K  vishay
si4542dy.pdf pdf_icon

4542

Si4542DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETN-Channel 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/ECP-Channel - 300.045

 0.3. Size:242K  onsemi
si4542dy.pdf pdf_icon

4542

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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