4542 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4542
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de 4542 MOSFET
4542 Datasheet (PDF)
4542.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/6.9A, RDS(ON)=27.44m @VGS =10VG1 2 7 D1R DS(ON)=41.16m @VGS =4.5V S2 3 6 D2G2 4 5 D2 P-ChannelR DS(ON)=32.00m @VGS =10.0V-30V/-6.9A,SO-8R DS(ON)=50.00m @VGS =4.5V Super High Dense Ce
si4542dy.pdf

January 2001Si4542DY30V Complementary PowerTrenchMOSFETGeneral Description FeaturesThis complementary MOSFET device is produced using Q1: N-ChannelFairchilds advanced PowerTrench process that has6 A, 30 V RDS(on) = 28 m @ VGS = 10Vbeen especially tailored to minimize the on-stateresistance and yet maintain low gate charge forRDS(on) = 35 m @ VGS
si4542dy.pdf

Si4542DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETN-Channel 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/ECP-Channel - 300.045
si4542dy.pdf

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Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .



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