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4542 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4542
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP8

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4542 Datasheet (PDF)

 ..1. Size:2363K  shenzhen
4542.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/6.9A, RDS(ON)=27.44m @VGS =10VG1 2 7 D1R DS(ON)=41.16m @VGS =4.5V S2 3 6 D2G2 4 5 D2 P-ChannelR DS(ON)=32.00m @VGS =10.0V-30V/-6.9A,SO-8R DS(ON)=50.00m @VGS =4.5V Super High Dense Ce

 0.1. Size:54K  fairchild semi
si4542dy.pdf

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January 2001Si4542DY30V Complementary PowerTrenchMOSFETGeneral Description FeaturesThis complementary MOSFET device is produced using Q1: N-ChannelFairchilds advanced PowerTrench process that has6 A, 30 V RDS(on) = 28 m @ VGS = 10Vbeen especially tailored to minimize the on-stateresistance and yet maintain low gate charge forRDS(on) = 35 m @ VGS

 0.2. Size:253K  vishay
si4542dy.pdf

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Si4542DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETN-Channel 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/ECP-Channel - 300.045

 0.3. Size:242K  onsemi
si4542dy.pdf

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ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.4. Size:132K  no
2sc4542.pdf

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 0.5. Size:935K  secos
ssg4542c.pdf

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SSG4542C N-Ch: 8.3 A, 40 V, RDS(ON) 14 mP-Ch: -7.6 A, -40 V, RDS(ON) 28 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

 0.6. Size:259K  analog power
am4542c.pdf

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Analog Power AM4542CP & N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 27 @ V = 4.5V 7.3GS40converters and power management in portable and 22 @ V = 10V 8.3GS

 0.7. Size:181K  anpec
apm4542k.pdf

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APM4542KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel D1D1D230V/7A,D2RDS(ON) =17m(typ.) @ VGS = 10VS1RDS(ON) =22m(typ.) @ VGS = 4.5VG1S2G2 P-ChannelTop View of SOP - 8-30V/-5.5A,RDS(ON) =35m(typ.) @ VGS =-10V(3)(8) (7)RDS(ON) =51m(typ.) @ VGS =-4.5VS2D1 D1 Super High Dense C

 0.8. Size:77K  kexin
ki4542dy.pdf

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SMD Type ICSMD Type Transistors30V Complementary PowerTrench MOSFETKI4542DYFeaturesN-Channel6A, 30V RDS(ON) = 28m @VGS = 10VRDS(ON) = 35m @VGS =4.5VP-Channel-6 A, -30 V RDS(ON) = 32m @VGS =- 10 VRDS(ON) = 45m @VGS =-4.5VAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitDrain to Source Voltage VDSS 30 -30 VGate to Source Voltage VGS 20 20 VDr

 0.9. Size:1411K  matsuki electric
me4542 me4542-g.pdf

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ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON)40m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)35m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially

 0.10. Size:1608K  cn vbsemi
si4542dy.pdf

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SI4542DYwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

 0.11. Size:190K  inchange semiconductor
2sc4542.pdf

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.A

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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