4542 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/6.9A, RDS(ON)=27.44m @VGS =10VG1 2 7 D1R DS(ON)=41.16m @VGS =4.5V S2 3 6 D2G2 4 5 D2 P-ChannelR DS(ON)=32.00m @VGS =10.0V-30V/-6.9A,SO-8R DS(ON)=50.00m @VGS =4.5V Super High Dense Ce

January 2001Si4542DY30V Complementary PowerTrenchMOSFETGeneral Description FeaturesThis complementary MOSFET device is produced using Q1: N-ChannelFairchilds advanced PowerTrench process that has6 A, 30 V RDS(on) = 28 m @ VGS = 10Vbeen especially tailored to minimize the on-stateresistance and yet maintain low gate charge forRDS(on) = 35 m @ VGS

Si4542DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETN-Channel 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/ECP-Channel - 300.045

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SSG4542C N-Ch: 8.3 A, 40 V, RDS(ON) 14 mP-Ch: -7.6 A, -40 V, RDS(ON) 28 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

Analog Power AM4542CP & N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 27 @ V = 4.5V 7.3GS40converters and power management in portable and 22 @ V = 10V 8.3GS

APM4542KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel D1D1D230V/7A,D2RDS(ON) =17m(typ.) @ VGS = 10VS1RDS(ON) =22m(typ.) @ VGS = 4.5VG1S2G2 P-ChannelTop View of SOP - 8-30V/-5.5A,RDS(ON) =35m(typ.) @ VGS =-10V(3)(8) (7)RDS(ON) =51m(typ.) @ VGS =-4.5VS2D1 D1 Super High Dense C

SMD Type ICSMD Type Transistors30V Complementary PowerTrench MOSFETKI4542DYFeaturesN-Channel6A, 30V RDS(ON) = 28m @VGS = 10VRDS(ON) = 35m @VGS =4.5VP-Channel-6 A, -30 V RDS(ON) = 32m @VGS =- 10 VRDS(ON) = 45m @VGS =-4.5VAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitDrain to Source Voltage VDSS 30 -30 VGate to Source Voltage VGS 20 20 VDr

ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON)40m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)35m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially

SI4542DYwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.A