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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel S1 1 8 D1 30V/6.9A, RDS(ON)=27.44m @VGS =10V G1 2 7 D1 R DS(ON)=41.16m @VGS =4.5V S2 3 6 D2 G2 4 5 D2 P-Channel R DS(ON)=32.00m @VGS =10.0V -30V/-6.9A, SO-8 R DS(ON)=50.00m @VGS =4.5V Super High Dense Ce

January 2001 Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 6 A, 30 V RDS(on) = 28 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 35 m @ VGS

Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFET N-Channel 30 0.035 at VGS = 4.5 V 5.8 100 % Rg Tested 0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/EC P-Channel - 30 0.045

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SSG4542C N-Ch 8.3 A, 40 V, RDS(ON) 14 m P-Ch -7.6 A, -40 V, RDS(ON) 28 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

Analog Power AM4542C P & N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 27 @ V = 4.5V 7.3 GS 40 converters and power management in portable and 22 @ V = 10V 8.3 GS

APM4542K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel D1 D1 D2 30V/7A, D2 RDS(ON) =17m (typ.) @ VGS = 10V S1 RDS(ON) =22m (typ.) @ VGS = 4.5V G1 S2 G2 P-Channel Top View of SOP - 8 -30V/-5.5A, RDS(ON) =35m (typ.) @ VGS =-10V (3) (8) (7) RDS(ON) =51m (typ.) @ VGS =-4.5V S2 D1 D1 Super High Dense C

SMD Type IC SMD Type Transistors 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6A, 30V RDS(ON) = 28m @VGS = 10V RDS(ON) = 35m @VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @VGS =- 10 V RDS(ON) = 45m @VGS =-4.5V Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage VDSS 30 -30 V Gate to Source Voltage VGS 20 20 V Dr

ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 25m @VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON) 40m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 35m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially

SI4542DY www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. A