4542 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 4542
Маркировка: 4542
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 6.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: SOP8
4542 Datasheet (PDF)
4542.pdf
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/6.9A, RDS(ON)=27.44m @VGS =10VG1 2 7 D1R DS(ON)=41.16m @VGS =4.5V S2 3 6 D2G2 4 5 D2 P-ChannelR DS(ON)=32.00m @VGS =10.0V-30V/-6.9A,SO-8R DS(ON)=50.00m @VGS =4.5V Super High Dense Ce
si4542dy.pdf
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January 2001Si4542DY30V Complementary PowerTrenchMOSFETGeneral Description FeaturesThis complementary MOSFET device is produced using Q1: N-ChannelFairchilds advanced PowerTrench process that has6 A, 30 V RDS(on) = 28 m @ VGS = 10Vbeen especially tailored to minimize the on-stateresistance and yet maintain low gate charge forRDS(on) = 35 m @ VGS
si4542dy.pdf
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Si4542DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETN-Channel 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested0.032 at VGS = - 10 V - 6.1 Compliant to RoHS Directive 2002/95/ECP-Channel - 300.045
si4542dy.pdf
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ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
ssg4542c.pdf
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SSG4542C N-Ch: 8.3 A, 40 V, RDS(ON) 14 mP-Ch: -7.6 A, -40 V, RDS(ON) 28 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe
am4542c.pdf
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Analog Power AM4542CP & N-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 27 @ V = 4.5V 7.3GS40converters and power management in portable and 22 @ V = 10V 8.3GS
apm4542k.pdf
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APM4542KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel D1D1D230V/7A,D2RDS(ON) =17m(typ.) @ VGS = 10VS1RDS(ON) =22m(typ.) @ VGS = 4.5VG1S2G2 P-ChannelTop View of SOP - 8-30V/-5.5A,RDS(ON) =35m(typ.) @ VGS =-10V(3)(8) (7)RDS(ON) =51m(typ.) @ VGS =-4.5VS2D1 D1 Super High Dense C
ki4542dy.pdf
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SMD Type ICSMD Type Transistors30V Complementary PowerTrench MOSFETKI4542DYFeaturesN-Channel6A, 30V RDS(ON) = 28m @VGS = 10VRDS(ON) = 35m @VGS =4.5VP-Channel-6 A, -30 V RDS(ON) = 32m @VGS =- 10 VRDS(ON) = 45m @VGS =-4.5VAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitDrain to Source Voltage VDSS 30 -30 VGate to Source Voltage VGS 20 20 VDr
me4542 me4542-g.pdf
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ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON)40m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)35m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially
si4542dy.pdf
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SI4542DYwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
2sc4542.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.A
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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![4542](https://alltransistors.com/images/es.png)
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Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C