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SI2310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI2310

Código: CA2TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.38 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: SOT23

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SI2310 Datasheet (PDF)

1.1. si2310.pdf Size:631K _shenzhen-tuofeng-semi

SI2310
SI2310

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼Simple Drive Requirement BVDSS 60V ▼ ▼ ▼ ▼Small Package Outline RDS(ON) 90mΩ ▼ ▼ ▼ D ▼Surface Mount Device ID 3A ▼ ▼ ▼ S SOT-23 G Description The MOSFETs utilized advanced processing techniques to ˇ achieve the lowest possible on-resistance,

5.1. si2316bd.pdf Size:212K _vishay

SI2310
SI2310

Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ) Definition TrenchFET Power MOSFET 0.050 at VGS = 10 V 4.5 30 3.16 nC PWM Optimized 0.080 at VGS = 4.5 V 3.4 100 % Rg tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch DC/DC Conver

5.2. si2318cd.pdf Size:230K _vishay

SI2310
SI2310

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Load Swit

5.3. si2316ds.pdf Size:202K _vishay

SI2310
SI2310

Si2316DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?)ID (A) Pb-free TrenchFET Power MOSFET 0.050 at VGS = 10 V 3.4 Available 30 0.085 at VGS = 4.5 V 2.6 RoHS* APPLICATIONS COMPLIANT Battery Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2316DS (C6)* * Marking Code Ordering Information:

5.4. si2314eds.pdf Size:89K _vishay

SI2310
SI2310

Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D ESD Protected: 3000 V D RoHS Compliant Pb-free 0.033 @ VGS = 4.5 V 4.9 Available APPLICATIONS 0.040 @ VGS = 2.5 V 4.4 20 0.051 @ VGS = 1.8 V 3.9 D LI-lon Battery Protection D TO-236 (SOT-23) G 1 3 D 3 kW G S 2 Top View Si2314EDS (C4)* S *

5.5. si2314ed.pdf Size:187K _vishay

SI2310
SI2310

Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Available 0.033 at VGS = 4.5 V 4.9 TrenchFET Power MOSFET 0.040 at VGS = 2.5 V 20 4.4 ESD Protected: 3000 V 0.051 at VGS = 1.8 V 3.9 APPLICATIONS LI-lon Battery Protection TO-236 D (SOT-23) G 1 3 D 3 k? S 2 G

5.6. si2311ds.pdf Size:205K _vishay

SI2310
SI2310

Si2311DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?)ID (A) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 3.5 RoHS 0.072 at VGS = - 2.5 V - 8 - 2.8 COMPLIANT APPLICATIONS 0.120 at VGS = - 1.8 V - 2.0 Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2311DS (C1)* * Marking Code Or

5.7. si2315bds.pdf Size:206K _vishay

SI2310
SI2310

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?)ID (A) Pb-free TrenchFET Power MOSFETs: 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85 Available 0.065 at VGS = - 2.5 V - 12 - 3.4 RoHS* COMPLIANT 0.100 at VGS = - 1.8V - 2.7 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2315BDS *(M5) * Marking

5.8. si2318ds.pdf Size:185K _vishay

SI2310
SI2310

Si2318DS Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Available 0.045 at VGS = 10 V 3.9 TrenchFET Power MOSFET 40 0.058 at VGS = 4.5 V 3.5 APPLICATIONS Stepper Motors Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2318DS( C8)* *Marking Code Ordering Information:

5.9. si2312ds.pdf Size:85K _vishay

SI2310
SI2310

Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 1.8-V Rated D RoHS Compliant VDS (V) rDS(on) (W) ID (A) Qg (Typ) Pb-free 0.033 @ VGS = 4.5 V 4.9 Available 0.040 @ VGS = 2.5 V 4.4 20 11.2 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1E3 (Lead (Pb)-Free)

5.10. si2319cd.pdf Size:222K _vishay

SI2310
SI2310

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.077 at VGS = - 10 V - 4.4 - 40 7 nC 100 % Rg Tested 0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Converter TO-236

5.11. si2319ds.pdf Size:187K _vishay

SI2310
SI2310

Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)b Available 0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0 - 40 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Information: Si2319D

5.12. si2312.pdf Size:1882K _htsemi

SI2310
SI2310

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31m? RDS(ON), Vgs@2.5V, Ids@4.5A < 37m? RDS(ON), Vgs@1.8V, Ids@3.9A < 85m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF.

5.13. si2315bds-3.pdf Size:1928K _kexin

SI2310
SI2310

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 ■ Features 3 ● VDS (V) =-12V ● ID =-3.85A (VGS =-4.5V) ● RDS(ON) < 50mΩ (VGS =-4.5V) 1 2 ● RDS(ON) < 65mΩ (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 100mΩ (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. D

5.14. si2318cds.pdf Size:1646K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON) < 42mΩ (VGS = 10V) 1 2 ● RDS(ON) < 51mΩ (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 D 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

5.15. si2314eds.pdf Size:1833K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) SOT-23 Unit: mm +0.1 2.9 -0.1 ■ Features +0.1 0.4-0.1 ● VDS (V) = 20V 3 ● ID = 4.9 A (VGS = 4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) ● RDS(ON) < 40mΩ (VGS = 2.5V) 1 2 D +0.1 +0.05 ● RDS(ON) < 51mΩ (VGS = 1.8V) 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 G 1 3 k 1.Gate G 3 D 2.Source 3.Drai

5.16. si2312ds-3.pdf Size:1696K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 20V ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) 1 2 ● RDS(ON) < 40mΩ (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 51mΩ (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain

5.17. si2318ds-3.pdf Size:1451K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel MOSFET SI2318DS (KI2318DS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 40V ● ID = 3.9 A (VGS = 10V) 1 2 ● RDS(ON) < 45mΩ (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 58mΩ (VGS = 4.5V) +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain G 1 3 D S 2 ■ Absolute Maximum Ratings Ta = 25℃ Paramet

5.18. si2318cds-3.pdf Size:1519K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON) < 42mΩ (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 ● RDS(ON) < 51mΩ (VGS = 4.5V) 0.95 -0.1 +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Sy

5.19. si2319ds-3.pdf Size:1853K _kexin

SI2310
SI2310

SMD Type MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 ■ Features 3 ● VDS (V) =-40V ● ID =-3.0A (VGS =-10V) ● RDS(ON) < 82mΩ (VGS =-10V) 1 2 ● RDS(ON) < 130mΩ (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25

5.20. si2315bds.pdf Size:1896K _kexin

SI2310
SI2310

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23 Unit: mm +0.1 2.9 -0.1 ■ Features +0.1 0.4 -0.1 ● VDS (V) =-12V 3 ● ID =-3.85A (VGS =-4.5V) ● RDS(ON) < 50mΩ (VGS =-4.5V) ● RDS(ON) < 65mΩ (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) < 100mΩ (VGS =-1.8V) +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ A

5.21. si2318ds.pdf Size:1447K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel MOSFET SI2318DS (KI2318DS) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 40V ● ID = 3.9 A (VGS = 10V) ● RDS(ON) < 45mΩ (VGS = 10V) 1 2 +0.1 +0.05 0.95 -0.1 ● RDS(ON) < 58mΩ (VGS = 4.5V) 0.1-0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain G 1 3 D S 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Sy

5.22. si2312ds.pdf Size:1660K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4 -0.1 ● VDS (V) = 20V 3 ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) ● RDS(ON) < 40mΩ (VGS = 2.5V) 1 2 ● RDS(ON) < 51mΩ (VGS = 1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Abs

5.23. si2314eds-3.pdf Size:1833K _kexin

SI2310
SI2310

SMD Type MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 ■ Features 0.4-0.1 3 ● VDS (V) = 20V ● ID = 4.9 A (VGS = 4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) 1 2 ● RDS(ON) < 40mΩ (VGS = 2.5V) D +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 51mΩ (VGS = 1.8V) +0.1 1.9 -0.2 3 k G G 1 1. Gate 2. Source 3 D 3.

5.24. si2319ds.pdf Size:1859K _kexin

SI2310
SI2310

SMD Type MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4 -0.1 ● VDS (V) =-40V 3 ● ID =-3.0A (VGS =-10V) ● RDS(ON) < 82mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 3 D 1.Gate 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Par

5.25. si2315.pdf Size:999K _shenzhen-tuofeng-semi

SI2310
SI2310

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an ext

5.26. si2314.pdf Size:1367K _shenzhen-tuofeng-semi

SI2310
SI2310

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2314 N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 20 0.051 @ VGS = 1.8 V 3.9 (SOT-23) G 1 3 D S 2 Top View Si2314 (AEXT) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

5.27. si2319.pdf Size:659K _shenzhen-tuofeng-semi

SI2310
SI2310

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2319 P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)b APPLICATIONS 0.082 @ VGS = -10 V -3.0 -40 40 D Load Switch 0.130 @ VGS = -4.5 V -2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319 (C91T)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

5.28. si2312.pdf Size:304K _shenzhen-tuofeng-semi

SI2310
SI2310

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312 PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 20 7.5 0.047 @ VGS = 1.8 V 4.1 (SOT-23) G 1 3 D Ordering Information: Si2312 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

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