SI2310 PDF and Equivalents Search

 

SI2310 Specs and Replacement

Type Designator: SI2310

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT23

SI2310 substitution

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SI2310 datasheet

 ..1. Size:475K  mcc
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SI2310

SI2310 Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF" Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150 ... See More ⇒

 ..2. Size:631K  shenzhen
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SI2310

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance,... See More ⇒

 ..3. Size:3066K  born
si2310.pdf pdf_icon

SI2310

SI2310 MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability MAXIMUM RANTINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 16 Drain Current (Note 1) ID 3.8 A Power Dissipation (N... See More ⇒

 ..4. Size:752K  mdd
si2310.pdf pdf_icon

SI2310

SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 105m @10V 1. GATE 3A 60V 2. SOURCE 125m @4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote... See More ⇒

Detailed specifications: SI2301A, SI2302A, SI2303, SI2304, SI2305B, SI2307, SI2308, SI2309, AO3407, SI2313, SI2314, SI2315, SI2319, SI2323, SI2328, SIA519, XP151A13AO

Keywords - SI2310 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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