SIA519 Todos los transistores

 ..1. Size:434K  shenzhen
 sia519.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SiA519 N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 0.040 at VGS = 4.5 V 4.2 N-Channel 20 3.7 nC 0.065 at VGS = 2.5 V 3.3 0.090 at VGS = - 4.5 V - 2.9 P-Channel - 20 5.3 nC 0.137 at VGS = - 2.5 V - 2.3 D1 S2 1 S1 2 G1 3 D1 D2 G1 D1 G2 D2 6 G2 5 2.05 mm 2.05 mm S2

 0.1. Size:270K  vishay
 sia519edj.pdf

New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs N-Channel 20 3.7 nC 0.065 at VGS = 2.5 V 4.5a Typical ESD Protection N-Channel 2000 V 0.090 at VGS = - 4.5 V - 4.5a P-C

 0.2. Size:270K  vishay
 sia519ed.pdf

New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs N-Channel 20 3.7 nC 0.065 at VGS = 2.5 V 4.5a Typical ESD Protection N-Channel 2000 V 0.090 at VGS = - 4.5 V - 4.5a P-C

 9.1. Size:266K  vishay
 sia517dj.pdf

New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.029 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs 0.034 at VGS = 2.5 V 4.5a N-Channel 12 5.6 nC New Thermally Enhanced PowerPAK 0.044 at VGS = 1.8 V 4.5a SC-70 Packag

 9.2. Size:227K  vishay
 sia513dj.pdf

New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) TrenchFET Power MOSFETs 0.060 at VGS = 4.5 V 4.5a N-Channel 20 3.5 nC New Thermally Enhanced PowerPAK RoHS 0.092 at VGS = 2.5 V 4.5a COMPLIANT SC-70 Package 0.110 at VGS = - 4.5 V - 4.5a - Small Footprint

 9.3. Size:133K  vishay
 sia511dj.pdf

New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) TrenchFET Power MOSFETs 0.040 at VGS = 4.5 V 4.5a New Thermally Enhanced PowerPAK RoHS N-Channel 12 0.048 at VGS = 2.5 V 4.5a 4.5 nC COMPLIANT SC-70 Package 0.063 at VGS = 1.8 V 4.5a - Small Footprint Area

 9.4. Size:3543K  kexin
 sia517dj.pdf

SMD Type MOSFET Complementary Trench MOSFET SIA517DJ (KIA517DJ) DFN2X2-6L Features N-Channel VDS (V) = 12V ID = 4.5 A (VGS = 4.5V) 1 S1 RDS(ON) 29m (VGS = 4.5V) 2 G1 RDS(ON) 34m (VGS = 2.5V) 3 D1 D2 RDS(ON) 44m (VGS = 1.8V) D1 D2 6 RDS(ON) 65m (VGS = 1.5V) G2 5 2.05 mm 2.05 mm S2 P-Channel 4 VDS (V) = -12V

 9.5. Size:3458K  cn tuofeng
 sia517.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N- and P-Channel 12-V (D-S) MOSFET SiA517 N- and P-Channel 12-V (D-S) MOSFET DFN2X2-6L PRODUCT SUMMARY VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 1 S1 0.029 at VGS = 4.5 V 4.5a 2 G1 0.034 at VGS = 2.5 V 4.5a 3 D1 N-Channel 12 5.6 nC D2 0.044 at VGS = 1.8 V 4.5a D1 D2 6 0.065 at VGS = 1.5 V 4.5a G2 5 2.05 mm 0.061 at V