SIA519 PDF and Equivalents Search

 

SIA519 Specs and Replacement

Type Designator: SIA519

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 7.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: DFNWB2X2-6L

SIA519 substitution

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SIA519 datasheet

 ..1. Size:434K  shenzhen
sia519.pdf pdf_icon

SIA519

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SiA519 N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 0.040 at VGS = 4.5 V 4.2 N-Channel 20 3.7 nC 0.065 at VGS = 2.5 V 3.3 0.090 at VGS = - 4.5 V - 2.9 P-Channel - 20 5.3 nC 0.137 at VGS = - 2.5 V - 2.3 D1 S2 1 S1 2 G1 3 D1 D2 G1 D1 G2 D2 6 G2 5 2.05 mm 2.05 mm S2 ... See More ⇒

 0.1. Size:270K  vishay
sia519edj.pdf pdf_icon

SIA519

New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs N-Channel 20 3.7 nC 0.065 at VGS = 2.5 V 4.5a Typical ESD Protection N-Channel 2000 V 0.090 at VGS = - 4.5 V - 4.5a P-C... See More ⇒

 0.2. Size:270K  vishay
sia519ed.pdf pdf_icon

SIA519

New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs N-Channel 20 3.7 nC 0.065 at VGS = 2.5 V 4.5a Typical ESD Protection N-Channel 2000 V 0.090 at VGS = - 4.5 V - 4.5a P-C... See More ⇒

 9.1. Size:266K  vishay
sia517dj.pdf pdf_icon

SIA519

New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.029 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs 0.034 at VGS = 2.5 V 4.5a N-Channel 12 5.6 nC New Thermally Enhanced PowerPAK 0.044 at VGS = 1.8 V 4.5a SC-70 Packag... See More ⇒

Detailed specifications: SI2309 , SI2310 , SI2313 , SI2314 , SI2315 , SI2319 , SI2323 , SI2328 , 2N60 , XP151A13AO , XP152A12CO , 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 .

History: RSS130N03TB

Keywords - SIA519 MOSFET specs

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