XP152A12CO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP152A12CO
Código: 212T
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SOT23
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XP152A12CO Datasheet (PDF)
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XP152A12COMR20V P-Channel Enhancement Mode MOSFETVDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130mRDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.0
xp152a12c0mr.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance : 0.3 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in SOT -
xp152a12c0mr-g.pdf
Product specificationXP152A12C0MR-G Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak
xp152a12c0mr-g.pdf
XP152A12C0MR-G ETR1121_003Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de
xp152a12c0mr.pdf
XP152A12C0MRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA
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