XP152A12CO PDF and Equivalents Search

 

XP152A12CO Specs and Replacement

Type Designator: XP152A12CO

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT23

XP152A12CO substitution

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XP152A12CO datasheet

 0.1. Size:2336K  htsemi
xp152a12comr.pdf pdf_icon

XP152A12CO

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.0... See More ⇒

 5.1. Size:644K  shenzhen
xp152a12c0mr.pdf pdf_icon

XP152A12CO

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.3 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in SOT -... See More ⇒

 5.2. Size:97K  tysemi
xp152a12c0mr-g.pdf pdf_icon

XP152A12CO

Product specification XP152A12C0MR-G Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak... See More ⇒

 5.3. Size:311K  torex
xp152a12c0mr-g.pdf pdf_icon

XP152A12CO

XP152A12C0MR-G ETR1121_003 Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de... See More ⇒

Detailed specifications: SI2313 , SI2314 , SI2315 , SI2319 , SI2323 , SI2328 , SIA519 , XP151A13AO , P60NF06 , 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 .

History: IPD50P04P4L-11 | 60N03 | WMM07N65C2

Keywords - XP152A12CO MOSFET specs

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