70N03 Todos los transistores

 ..1. Size:804K  shenzhen
 70n03.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 70N03 Power-Transistor Product Summary V 30 V DS R 8.0 m DS(on),max I 70 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified TO-251 MSL1 up to 260 C peak reflow 175 C operating temperature 3 Green product (RoHS compliant) 2 1 Ultra low Rds(on) 100% Avalanche tested Ty

 ..2. Size:2696K  goford
 70n03.pdf

GOFORD 70N03 Features Pin Description VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ) D D D D 30V 4.6m 3.3m 70 A G Pin 1 S S S Reliable and Rugged DFN5x6-8 Lower Qg and Qgd for high-speed switching (5,6,7,8) Lower RDS(ON) to Minimize Conduction Losses DDDD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Deskto

 0.1. Size:351K  st
 std70n03l-1 std70n03l-1 std70n03l.pdf

STD70N03L STD70N03L-1 N-channel 30V - 0.0059 - 70A - DPAK / IPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD70N03L 30V

 0.2. Size:1123K  rohm
 rxh070n03.pdf

Data Sheet 4V Drive Nch MOSFET RXH070N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (1) (4) Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces

 0.3. Size:73K  vishay
 sup70n03-09bp sub70n03-09bp.pdf

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 30 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

 0.4. Size:113K  vishay
 sup70n03-09p sub70n03-09p.pdf

SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 30 30 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09 Top View N-Channel MOSFET SUP70N03-09 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy

 0.5. Size:67K  vishay
 sum70n03-09cp.pdf

SUM70N03-09CP Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Optimized for High- or Low-Side V(BR)DSS (V) rDS(on) (W) ID (A) D New Low Thermal Resistance Package 0.0095 @ VGS = 20 V 70 D 100% Rg Tested 30 30 0.014 @ VGS = 4.5 V 58 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-263 DRAIN connected to TAB

 0.6. Size:52K  vishay
 sup70n03-09bp.pdf

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 30 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

 0.7. Size:186K  infineon
 ipd70n03s4l-04.pdf

IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04

 0.8. Size:186K  infineon
 ipd70n03s4l-04 ds.pdf

IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04

 0.9. Size:85K  onsemi
 ntd70n03r-001 ntd70n03rg ntd70n03r.pdf

NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 5.6 mW 72 A Pb-Free Packages are Available N-Channel MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) D P

 0.10. Size:146K  utc
 ut70n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 0.11. Size:142K  intersil
 rfp70n03 rf1s70n03sm.pdf

RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power Features MOSFETs 70A, 30V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

 0.12. Size:676K  secos
 ssd70n03-04d.pdf

SSD70N03-04D 75A, 30V, RDS(ON) 6 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme

 0.13. Size:2356K  jiangsu
 cjac70n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYP PDFN 5 6-8L-D 4.3m @10V 30 V 70A 6.0m @4.5V DESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

 0.14. Size:302K  analog power
 am70n03-04d.pdf

Analog Power AM70N03-04D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 6 @ VGS = 10V 75 Low thermal impedance 30 8 @ VGS = 4.5V 65 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 0.15. Size:302K  analog power
 am70n03-08d.pdf

Analog Power AM70N03-08D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 8 @ VGS = 10V 65 Low thermal impedance 30 11.5 @ VGS = 4.5V 54 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 0.16. Size:906K  blue-rocket-elect
 bri70n03.pdf

BRI70N03(BRCS70N03I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features Super high dense cell design for low RDS(on) Rugged and reliable surface. / Applications DC/

 0.17. Size:1674K  blue-rocket-elect
 brcs070n03dsc.pdf

 0.18. Size:1464K  blue-rocket-elect
 brcs070n03dp.pdf

 0.19. Size:847K  blue-rocket-elect
 brd70n03.pdf

BRD70N03 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/

 0.20. Size:692K  shantou-huashan
 hfp70n03v.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N03V N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)

 0.21. Size:691K  shantou-huashan
 hfu70n03v.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFU70N03V N-Channel Enhancement Mode Field Effect Transistor Applications TO-251 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)

 0.22. Size:1184K  kexin
 ndt70n03.pdf

SMD Type MOSFET N-Channel MOSFET NDT70N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V ID = 33A (VGS = 10V) RDS(ON) 4.3m (VGS = 10V) D 0.127 +0.1 0.80-0.1 RDS(ON) 6.5m (VGS = 4.5V) max + 0.1 1 Gate 2.3 0.60- 0.1 G +0.15 4.60 -0.15 2 Drain 3 Source S Absolute Maximum Ratings

 0.23. Size:362K  bruckewell
 ms70n03.pdf

MS70N03 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 6 @ VGS = 10V 75 Low thermal impedance 30 8 @ VGS = 4.5V 65 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE

 0.24. Size:708K  feihonltd
 fhu70n03a fhd70n03a.pdf

N N-CHANNEL MOSFET FHU70N03A/FHD70N03A MAIN CHARACTERISTICS FEATURES ID 68 A Low gate charge VDSS 30 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 7.4m Fast switching Rdson-typ @Vgs=4.5V 10.8m 100% 100% avalanche tested

 0.25. Size:1428K  matsuki electric
 me70n03s me70n03s-g.pdf

ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.6m @VGS=10V The ME70N03S is the N-Channel logic enhancement mode RDS(ON) 11m @VGS=4.5V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is

 0.26. Size:898K  cn hunteck
 htj270n03.pdf

HTJ270N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 19 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 30 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 6 A ID (Sillicon Limited) Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT

 0.27. Size:2026K  cn vbsemi
 vbzl70n03.pdf

VBZL70N03 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS 200 V Definition RDS(on) VGS = 10 V 260 m Surface Mount 370 Available in Tape and Reel RDS(on) VGS = 4.5 V m Dynamic dV/dt Rating ID 10 A Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling

 0.28. Size:1220K  cn vbsemi
 vbzfb70n03.pdf

VBZFB70N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 30 V 100 % Rg and UIS Tested 3.5 RDS(on) VGS = 10 V m Compliant to RoHS Directive 2011/65/EU RDS(on) VGS = 4.5 V 4.5 m APPLICATIONS 100 ID A Configuration Single OR-ing Server D TO-251 DC/DC G S G D S Top View N-Channel MOSFET

 0.29. Size:1442K  cn vbsemi
 vbze70n03.pdf

VBZE70N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004.5at VGS = 10 V 110 30 70 nC 0.006at VGS = 4.5 V 98 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB

 0.30. Size:620K  cn hmsemi
 hms170n03d.pdf

HMS170N03D N-Channel Super Trench Power MOSFET Description The HMS170N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 0.31. Size:515K  cn minos
 mdt70n03.pdf

Silicon N-Channel Power MOSFET Description The MDT70N03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V =30V,I =70A DS D R

 0.32. Size:205K  inchange semiconductor
 rfp70n03.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor RFP70N03 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSOLUT

 0.33. Size:4048K  cn apm
 ap70n03df.pdf

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

 0.34. Size:2676K  cn apm
 ap70n03nf.pdf

AP70N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R