70N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 70N03 Power-TransistorProduct SummaryV 30 VDSR 8.0mDS(on),maxI 70 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedTO-251 MSL1 up to 260C peak reflow 175C operating temperature3 Green product (RoHS compliant)21 Ultra low Rds(on) 100% Avalanche testedTy

GOFORD70N03FeaturesPin DescriptionVDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ)DD DD30V4.6m 3.3m 70AGPin 1SSS Reliable and RuggedDFN5x6-8 Lower Qg and Qgd for high-speed switching(5,6,7,8) Lower RDS(ON) to Minimize Conduction LossesDDDD Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Deskto

STD70N03LSTD70N03L-1N-channel 30V - 0.0059 - 70A - DPAK / IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70N03L 30V

Data Sheet4V Drive Nch MOSFETRXH070N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETSOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (SOP8). (1) (4) ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBasic ordering unit (pieces

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP/SUB70N03-09PVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V "70a30300.015 @ VGS = 4.5 V "55DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09Top ViewN-Channel MOSFETSUP70N03-09ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

SUM70N03-09CPVishay SiliconixN-Channel 30-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD Optimized for High- or Low-SideV(BR)DSS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance Package0.0095 @ VGS = 20 V 70D 100% Rg Tested30300.014 @ VGS = 4.5 V 58APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersDTO-263DRAIN connected to TAB

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04

IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04

NTD70N03RPower MOSFET72 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge25 V 5.6 mW 72 A Pb-Free Packages are AvailableN-ChannelMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)DP

UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

RFP70N03, RF1S70N03SMData Sheet July 1999 File Number 3404.470A, 30V, 0.010 Ohm, N-Channel Power FeaturesMOSFETs 70A, 30VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

SSD70N03-04D 75A, 30V, RDS(ON) 6 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYPPDFN 56-8L-D 4.3m@10V30 V70A6.0m@4.5VDESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

Analog Power AM70N03-04DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)6 @ VGS = 10V75 Low thermal impedance 308 @ VGS = 4.5V65 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

Analog Power AM70N03-08DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)8 @ VGS = 10V65 Low thermal impedance 3011.5 @ VGS = 4.5V54 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

BRI70N03(BRCS70N03I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features Super high dense cell design for low RDS(on) Rugged and reliablesurface. / Applications DC/

BRCS070N03DSC Rev.A Jul.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16.5A DS DRDS(ON)@10V

BRCS070N03DP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications

BRD70N03 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N03VN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)

Shantou Huashan Electronic Devices Co.,Ltd. HFU70N03VN-Channel Enhancement Mode Field Effect Transistor Applications TO-251 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)

SMD Type MOSFETN-Channel MOSFETNDT70N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 30V ID = 33A (VGS = 10V) RDS(ON) 4.3m (VGS = 10V)D0.127+0.10.80-0.1 RDS(ON) 6.5m (VGS = 4.5V) max+ 0.11 Gate2.3 0.60- 0.1G +0.154.60 -0.152 Drain3 SourceS Absolute Maximum Ratings

MS70N03N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)6 @ VGS = 10V75 Low thermal impedance308 @ VGS = 4.5V65 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

N N-CHANNEL MOSFET FHU70N03A/FHD70N03A MAIN CHARACTERISTICS FEATURES ID 68 A Low gate charge VDSS 30 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 7.4m Fast switching Rdson-typ @Vgs=4.5V 10.8m 100% 100% avalanche tested

ME70N03S/ME70N03S-G30V N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.6m@VGS=10V The ME70N03S is the N-Channel logic enhancement mode RDS(ON)11m@VGS=4.5V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is

HTJ270N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level19RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness30RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested6 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT

VBZL70N03www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS 200 VDefinitionRDS(on) VGS = 10 V 260 m Surface Mount370 Available in Tape and ReelRDS(on) VGS = 4.5 V m Dynamic dV/dt RatingID 10 A Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleling

VBZFB70N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS 30V 100 % Rg and UIS Tested3.5RDS(on) VGS = 10 V m Compliant to RoHS Directive 2011/65/EURDS(on) VGS = 4.5 V 4.5mAPPLICATIONS100ID AConfiguration Single OR-ing ServerDTO-251 DC/DCGSG D STop ViewN-Channel MOSFET

VBZE70N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004.5at VGS = 10 V 11030 70 nC0.006at VGS = 4.5 V 98APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB

HMS170N03DN-Channel Super Trench Power MOSFET Description The HMS170N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

INCHANGE Semiconductorisc N-Channel MOSFET Transistor RFP70N03FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAC-DC convertersLED lightingUninterruptible power supplyABSOLUT