IRF4905L Todos los transistores

 

IRF4905L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF4905L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 200 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 74 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 180(max) nC
   Tiempo de subida (tr): 99 nS
   Conductancia de drenaje-sustrato (Cd): 1400 pF
   Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET IRF4905L

 

IRF4905L Datasheet (PDF)

 ..1. Size:361K  international rectifier
irf4905lpbf irf4905spbf.pdf

IRF4905L
IRF4905L

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

 ..2. Size:361K  infineon
irf4905spbf irf4905lpbf.pdf

IRF4905L
IRF4905L

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

 0.1. Size:615K  infineon
auirf4905s auirf4905l.pdf

IRF4905L
IRF4905L

AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

 7.1. Size:108K  international rectifier
irf4905.pdf

IRF4905L
IRF4905L

PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

 7.2. Size:163K  international rectifier
irf4905s.pdf

IRF4905L
IRF4905L

PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 7.3. Size:181K  international rectifier
irf4905pbf.pdf

IRF4905L
IRF4905L

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

 7.4. Size:181K  infineon
irf4905pbf.pdf

IRF4905L
IRF4905L

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

 7.5. Size:347K  infineon
auirf4905.pdf

IRF4905L
IRF4905L

AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D

 7.6. Size:1522K  cn vbsemi
irf4905pbf.pdf

IRF4905L
IRF4905L

IRF4905PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

 7.7. Size:241K  inchange semiconductor
irf4905.pdf

IRF4905L
IRF4905L

isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

Otros transistores... IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF1405 , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 .

 

 
Back to Top

 


IRF4905L
  IRF4905L
  IRF4905L
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top