All MOSFET. IRF4905L Datasheet

 

IRF4905L MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF4905L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 74 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 180(max) nC

Rise Time (tr): 99 nS

Drain-Source Capacitance (Cd): 1400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO262

IRF4905L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF4905L Datasheet (PDF)

..1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

IRF4905L IRF4905L

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

..2. irf4905spbf irf4905lpbf.pdf Size:361K _infineon

IRF4905L IRF4905L

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

0.1. auirf4905s auirf4905l.pdf Size:615K _infineon

IRF4905L IRF4905L

AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

7.1. irf4905pbf.pdf Size:181K _international_rectifier

IRF4905L IRF4905L

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

7.2. irf4905s.pdf Size:163K _international_rectifier

IRF4905L IRF4905L

PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 7.3. irf4905.pdf Size:108K _international_rectifier

IRF4905L IRF4905L

PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

7.4. auirf4905.pdf Size:347K _infineon

IRF4905L IRF4905L

AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D

 7.5. irf4905pbf.pdf Size:181K _infineon

IRF4905L IRF4905L

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

7.6. irf4905pbf.pdf Size:1522K _cn_vbsemi

IRF4905L IRF4905L

IRF4905PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

7.7. irf4905.pdf Size:241K _inchange_semiconductor

IRF4905L IRF4905L

isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

Datasheet: IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , 15N60 , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 .

 

 
Back to Top