SSS5N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSS5N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de SSS5N60 MOSFET
SSS5N60 Datasheet (PDF)
sss5n60.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60SSS5N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS5N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a high
sss5n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.824 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsS
sss5n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Otros transistores... 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , P0903BDG , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 , G1601 , 2300 , 2301 .
History: BF556B | RFD15P06 | BF556A | NVB6410AN | SSS10N60 | NDT70N03 | S60N12RP
History: BF556B | RFD15P06 | BF556A | NVB6410AN | SSS10N60 | NDT70N03 | S60N12RP



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