SSS5N60 Datasheet and Replacement
Type Designator: SSS5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
SSS5N60 substitution
SSS5N60 Datasheet (PDF)
sss5n60.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60SSS5N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS5N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a high
sss5n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.824 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsS
sss5n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Datasheet: 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , IRF1405 , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 , G1601 , 2300 , 2301 .
History: BUP60 | 2SK1202 | SSW4N90AS | JMPL1050AP
Keywords - SSS5N60 MOSFET datasheet
SSS5N60 cross reference
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History: BUP60 | 2SK1202 | SSW4N90AS | JMPL1050AP



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