SSS5N60 MOSFET: N-Ch, 600V, 4A. Full datasheet with pinout, specifications and replacement transistor list

SSS5N60 Datasheet (PDF)

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60SSS5N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS5N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a high

9.1. Size:502K samsung
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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.824 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsS

9.2. Size:499K samsung
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Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , P0903BDG , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 , G1601 , 2300 , 2301 .