3401 Todos los transistores

 ..1. Size:1135K  goford
 3401.pdf

GOFORD 3401 DESCRIPTION D The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ) m m m 50 -4.2

 ..2. Size:803K  cn zre
 3401.pdf

3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 V(BR)DSS RDS(ON)MAX ID 65m @-10V SOT-23 Plastic-Encapsulate MOSFET 30V 75m @-4.5V -4.2A Features 90m @-2.5V SOT-23 High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing

 0.1. Size:249K  1
 nce3401ay.pdf

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30

 0.2. Size:41K  sanyo
 mch3401.pdf

Ordering number ENN6443 N-Channel Silicon MOSFET MCH3401 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2167 2.5V drive. [MCH3401] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings

 0.3. Size:87K  sanyo
 2sa1347 2sc3401.pdf

 0.4. Size:199K  nec
 ne34018.pdf

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER NE34018 (New Plastic Package) NOISE FIGURE & ASSOCIATED FEATURES GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA LOW COST MINIATURE PLASTIC PACKAGE 25 25 4 4 (SOT-343) 20 20 LOW NOISE FIGURE GA 0.6 dB typical at 2 GHz 15 15 3 3 HIGH ASSOCIATED GAIN 10 10 16.0 dB typical at 2 GHz LG = 0.6 2 5 m, WG

 0.5. Size:186K  diodes
 dmg3401lsn.pdf

DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = 25 C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =

 0.6. Size:382K  mcc
 si3401a.pdf

 0.7. Size:292K  utc
 ut3401.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM appli

 0.8. Size:301K  utc
 ut3401z.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app

 0.9. Size:323K  utc
 ut3401zl-ae3-r ut3401zg-ae3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM a

 0.10. Size:294K  utc
 ut3401g-ae3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app

 0.11. Size:515K  secos
 smg3401.pdf

SMG3401 -4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A SC-59 Description L Dim Min Max The SMG3401 uses advanced trench technology 3 A 2.70 3.10 S B Top View to provide excellent on-resistance extremely 2 1 B 1.40 1.60 efficient and cost-effectiveness device. C 1.00 1.30 The

 0.12. Size:235K  taiwansemi
 tsm3401cx.pdf

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

 0.13. Size:1634K  jiangsu
 cjk3401ah.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 50m @-10V -30V -4.2A 60 m @-4.5V m @-2.5V 85 FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum

 0.14. Size:377K  jiangsu
 cj3401.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING R1 G S Maximum ratings ( Ta=25 unless otherwise noted

 0.15. Size:780K  jiangsu
 cjk3401a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m @-10V 60 -30V 70 m -4.2A @-4.5V m @-2.5V 85 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi

 0.16. Size:1001K  jiangsu
 cj3401a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m @-10V 60 -30V 70 m -4.2A @-4.5V m @-2.5V 85 FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi

 0.17. Size:114K  jiangsu
 cj3401-hf.pdf

MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3401-HF (P-Channel ) Reverse Voltage - 30 Volts Forward Current - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 3 0.055(1.40) - Exceptional on-resistance and miximum DC current 0.047(1.20) capability. 1 2 0.079(2.00) 0.071(1.80) Me

 0.18. Size:1439K  htsemi
 ao3401.pdf

AO3401 30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V DS(ON) gs@-10V, I ds@-4.2A

 0.19. Size:371K  gsme
 gm3401.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3401 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FET

 0.20. Size:1540K  lge
 ao3401.pdf

AO3401 P-Channel 30V(D-S) MOSFET DESCRIPTION D The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)

 0.21. Size:1489K  wietron
 wtc3401.pdf

WTC3401 3 DRAIN P-Channel Enhancement DRAIN CURRENT Mode Power MOSFET -4.2 AMPERES DRAIN SOURCE VOLTAGE 1 -30 VOLTAGE GATE 2 SOURCE 3 Features *Advanced trench process technology 1 *High Density Cell Design For Ultra Low 2 On-Resistance SOT-23 Maximum Ratings(TA=25 Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage -30 VDS V Gate-Source Vo

 0.22. Size:454K  willas
 se3401.pdf

FM120-M WILLAS THRU SE340 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize bo

 0.23. Size:2014K  willsemi
 wpm3401.pdf

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m ) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

 0.24. Size:497K  aosemi
 ao3401.pdf

AO3401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 0.25. Size:231K  aosemi
 ao3401a.pdf

AO3401A 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0A gate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V)

 0.26. Size:766K  alfa-mos
 afp3401as.pdf

AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70 @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80 @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105 @VGS=-2.5V These devices are particularly suited for lo

 0.27. Size:634K  alfa-mos
 afp3401s.pdf

AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m @VGS=-2.5V These devices are particularly suited fo

 0.28. Size:1476K  shenzhen
 ao3401.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401 AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON)

 0.29. Size:421K  cystek
 mtp3401n3.pdf

Spec. No. C388N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2017.06.19 Page No. 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3401N3 ID@VGS=-10V, TA=25 C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 51m (typ) RDS(ON)@VGS=-2.5V, ID=-1A 59m (typ) Features Advanced trench process technology High density c

 0.30. Size:1381K  goford
 3401l.pdf

GOFORD 3401L Description D The 3401L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ) m m m 50 -4.2

 0.31. Size:1595K  goford
 3401a.pdf

 0.32. Size:95K  samhop
 sts3401a.pdf

Gre r r P Pr Pr Pro STS3401A a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 79 @ VGS=-10V Suface Mount Package. -30V -3.2A 127 @ VGS=-4.5V D SOT-23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAXI

 0.33. Size:132K  samhop
 sts3401.pdf

Green Product S TS 3401 S amHop Microelectronics C orp. J un.15 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y F E ATUR E S VDS S ID S uper high dense cell design for low R DS (ON). R DS (ON) ( m ) Max R ugged and reliable. 75 @ VG S = -10V -30V -3A S OT-23 Package. 100 @ VG S = -4.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

 0.34. Size:239K  can-sheng
 cs3401 sot-23-3.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-3 Plastic-Encapsulate Transistors 3401 MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source volta

 0.35. Size:735K  blue-rocket-elect
 brcs3401mc.pdf

 0.36. Size:771K  blue-rocket-elect
 ao3401.pdf

AO3401 Rev.A Aug.-2016 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

 0.37. Size:428K  semtech
 mmftp3401.pdf

MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS 12 V Drain Current T = 25 4 A -ID A 3.2 T = 70 A Peak Drain Current 1) -IDM 27 A Power Dissipation 2) T = 25 A 1.4 PD W 0.9 T = 70 A Junction and St

 0.38. Size:646K  lrc
 lp3401lt1g.pdf

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance. 3 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. 1 FEATURES 2 2)RDS(ON)

 0.39. Size:152K  sino
 sm3401nsqg.pdf

SM3401NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/50A, D RDS(ON) =2.8m (max.) @ VGS =10V RDS(ON) =3.6m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Com

 0.40. Size:439K  tysemi
 wpm3401.pdf

Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

 0.41. Size:94K  tysemi
 dmg3401lsn.pdf

Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = 25 C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (

 0.42. Size:236K  first silicon
 ftk3401.pdf

SEMICONDUCTOR FTK3401 TECHNICAL DATA D DESCRIPTION The FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = -30V,ID = -4.2A 3 RDS(ON)

 0.43. Size:1580K  kexin
 ao3401hf.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 120m (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain A

 0.44. Size:1515K  kexin
 ko3401.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET KO3401 SOT-89 Unit mm Features 1.70 0.1 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 65m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) D 0.42 0.1 RDS(ON) 120m (VGS =-2.5V) 0.46 0.1 1.Gate G 2.Drain S 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

 0.45. Size:1562K  kexin
 ao3401-3.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 120m (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain Absolu

 0.46. Size:1535K  kexin
 ao3401 ko3401.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 RDS(ON) 65m (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 RDS(ON) 120m (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain Absolute M

 0.47. Size:1535K  kexin
 ao3401.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 RDS(ON) 65m (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 RDS(ON) 120m (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain Absolute M

 0.48. Size:1315K  kexin
 ao3401a.pdf

SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V) +0.1 1.9-0.1 RDS(ON) 85m (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Ratings T

 0.49. Size:1320K  kexin
 ao3401a-3.pdf

SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-4 A (VGS =-10V) 1 2 RDS(ON) 50m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 60m (VGS =-4.5V) 1.9 -0.2 RDS(ON) 85m (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum R

 0.50. Size:194K  panjit
 pja3401.pdf

PPJA3401 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -30 V Current -3.6A Features RDS(ON) , VGS@-10V, ID@-3.6A

 0.51. Size:544K  panjit
 ppja3401a.pdf

PPJA3401A 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -30 V Current -3.6A Features RDS(ON) , VGS@-10V, ID@-3.6A

 0.52. Size:555K  ait semi
 am3401.pdf

AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement -30V/-4.3A, R =47m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-3.5A, R =55m (typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to -30V/-2.5A, R =70m (typ.

 0.53. Size:190K  belling
 blm3401a.pdf

 0.54. Size:190K  belling
 blm3401.pdf

P-Channel Enhancement BLM3401 Mode MOSFET BLM3401 BLM3401 BLM3401 FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other

 0.55. Size:1303K  elm
 elm53401ca.pdf

Single P-channel MOSFET ELM53401CA-S General description Features ELM53401CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-1.8A resistance. Rds(on)

 0.56. Size:981K  elm
 elm33401ca-s.pdf

Single P-channel MOSFET ELM33401CA-S General description Features ELM33401CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 0.57. Size:373K  elm
 elm13401ca.pdf

Single P-channel MOSFET ELM13401CA-S General description Features ELM13401CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V) resistance. Rds(on)

 0.58. Size:1426K  globaltech semi
 gsm3401s.pdf

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m @VGS=-2.5V Super high density cell design for extremely These devi

 0.59. Size:612K  globaltech semi
 gsm3401as.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m @VGS=-2.5V These devices are particularly suited for low Super high density cell de

 0.60. Size:107K  kia
 kia3401.pdf

-4.0A -30V 3401 P-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA3401 uses advanced trench technology to provide excellent R ,lowgate charge DS(on) and operation with gate voltages as lowas 2.5V.This device is suitable for use as a load switch or in PWM applications.Standard Product KIA3401 is Pb-free(meets ROHS & Sony 259 specificatio

 0.61. Size:147K  m-mos
 mmp3401.pdf

MMP3401 Package Level Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal C

 0.62. Size:248K  ncepower
 nce3401a.pdf

Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic

 0.63. Size:241K  ncepower
 nce3401.pdf

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID

 0.64. Size:265K  ncepower
 nce3401by.pdf

http //www.ncepower.com NCE3401BY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD

 0.65. Size:243K  ncepower
 nce3401y.pdf

Pb Free Product http //www.ncepower.com NCE3401Y NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE3401Y uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,

 0.66. Size:267K  ncepower
 nce3401ay.pdf

http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD

 0.67. Size:615K  ncepower
 nce3401e.pdf

Pb Free Product http //www.ncepower.com NCE3401E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features V = -30V,I = -4.4A DS D

 0.68. Size:372K  semtron
 smc3401.pdf

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle

 0.69. Size:372K  semtron
 stp3401a.pdf

STP3401A -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m (typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m (typ.)@VGS =-2.5V technology to provide exc

 0.70. Size:372K  semtron
 stp3401.pdf

STP3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ.)@VGS =-2.5V provide exce

 0.71. Size:1866K  slkor
 sl3401a.pdf

SL3401A SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 www.slkormicro.com 4

 0.72. Size:822K  slkor
 sl3401.pdf

SL3401 P-Channel Power MOSFET D General Features G VDS = -30V,ID = -4.1A RDS(ON)

 0.73. Size:337K  slkor
 sl3401s.pdf

SL3401S P-Channel Power MOSFET D General Features G VDS = -30V,ID = -4A RDS(ON)

 0.74. Size:169K  stansontech
 st3401m23rg.pdf

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

 0.75. Size:207K  stansontech
 st3401srg.pdf

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 0.76. Size:3338K  umw-ic
 ao3401a.pdf

R UMWpe UMW AO3401A UMW AO3401A M SFET SMD Ty P-Channel Enhancement MOSFET SOT 23 Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) RDS(ON) 120m (VGS =-2.5V) 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

 0.77. Size:1388K  agertech
 atm3401psa.pdf

ATM3401PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -30V Drain Current -4.2A Features Trench FET Power MOSFET Exceptional on-resistance and maximum DC current capability R

 0.78. Size:649K  agertech
 atm3401apsa.pdf

ATM3401APSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -30V Drain Current -4.2A DESCRIPTIONS SOT-23 The ATM3401APSA uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. FEATURES Schematic diagram V =

 0.79. Size:2303K  allpower
 ap3401.pdf

 0.80. Size:2093K  anbon
 as3401.pdf

P-Channel MOSFET AS3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING X 1 or B 1 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BV -30 V DSS

 0.81. Size:558K  ascend
 asdm3401zb.pdf

ASDM3401ZB -30V P-CHANNEL MOSFET FEATURES Product Summary High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability V DS -30 V R DS(on),Max@ VGS=-10 V 65 m Application I D -4.2 A PWM applications Load switch Power management top view D G S SOT-23 Maximum ratings ( Ta=25 unless otherwise noted)

 0.82. Size:1984K  born
 ao3401a.pdf

AO3401A MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit -30 Drain-Source Voltage BV V DSS Gate- Source Voltage V V GS +12 Drain Current (continuous) I -4.2 A D Drain Current (pulsed) I A DM -18 Total Device D

 0.83. Size:623K  eternal
 ev3401.pdf

Eternal Semiconductor Inc. EV3401 P-Channel Enhancement-Mode MOSFET (-30V, -4.2A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 53 @ VGS = -10 V,ID=-4.2A -30V -4.2A 64 @ VGS = -4.5V,ID=-4.0A 86 @ VGS = -2.5V,ID=-1.0A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package Lead Pb -free and halogen-free EV3401 Pin Assignm

 0.84. Size:798K  gp
 gp3401.pdf

GP3401 30V P-Channel MOSFET Product Summary SOT-23 V R I (BR)DSS DS(on)MAX D 65m @-10V D -30V 75m @-4.5V -4.2A 90m @-2.5V G Feature S TrenchFET Power MOSFET Schematic diagram Exceptional on-resistance and maximum DC current capability Application D DC/DC Converter Load Switch for Portable Devices Battery Switch G MARKING S ABSOLUTE

 0.85. Size:627K  guangdong hottech
 ao3401.pdf

Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET FEATURES High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability D 1.Gate 2.Source SOT-23 3.Drain G S MARKING A19T Maximum ratings ( Ta=25 unless otherwise noted) Unit Parameter Symbol Value Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 12 V Continuous

 0.86. Size:517K  huashuo
 hss3401a.pdf

HSS3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DS The HSS3401A is the high cell density trenched P- ch MOSFETs, which provides excellent RDSON R 53 m DS(ON),max and efficiency for most of the small power switching and load switch applications. I -4.3 A D The HSS3401A meet the RoHS and Green Product requirement with full function reliabili

 0.87. Size:468K  huashuo
 ao3401a.pdf

AO3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The AO3401A is the high cell density trenched P- ch MOSFETs, which provides excellent RDSON RDS(ON),typ 54 m and efficiency for most of the small power switching and load switch applications. ID -4.2 A The AO3401A meet the RoHS and Green Product requirement with full function reliability approv

 0.88. Size:72K  hx
 hx3401.pdf

SOT-23-3 Plastic-Encapsulate Transistors HX3401MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING X18V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage 12 V ID Drain current -4.2 A PD Power Dissipation 1.2

 0.89. Size:183K  hx
 hx3401a.pdf

SOT-23-3Plastic-Encapsulate Transistors HX3401A MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING A19T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V -3 A ID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHA

 0.90. Size:660K  jiejie micro
 jmtj3401a.pdf

JMTJ3401A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -4.2A Load Switch RDS(ON)

 0.91. Size:1152K  jiejie micro
 jmtl3401b.pdf

JMTL3401B Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -4A Load Switch RDS(ON)

 0.92. Size:546K  jiejie micro
 jmtl3401a.pdf

JMTL3401A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -4.2A Load Switch RDS(ON)

 0.93. Size:591K  jiejie micro
 jmtj3401b.pdf

JMTJ3401B Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -4A Load Switch RDS(ON)

 0.94. Size:1480K  leiditech
 se3401.pdf

SE3401 P-Channel Enhancement Mode Power MOSFET Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Batt

 0.95. Size:640K  jestek
 jst3401.pdf

JST3401 -30V,-4.2A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 63m @VGS=-10V RDS(ON) 67m @VGS=-4.5V RDS(ON) 85m @VGS=-2.5V APPLICATIONS Load/Power Switching Interfacing Switching P-CHANNEL MOSFET MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V 12 GS I -4.2 D Continuou

 0.96. Size:546K  jsmsemi
 jsm3401l.pdf

JSM3401L P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.053 @-10V 3 -30V 0.065 @-4.5V 1.GATE -4.2A 2.SOURCE 0.085 @-2.5V 3.DRAIN 1 2 MARKING Equivalent Circuit General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package A19TF w APPLICATION *w week code Load Switch for Portable Devices DC/DC Converter Maximu

 0.97. Size:375K  lowpower
 lpm3401.pdf

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON) 58m (typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON) 68m (typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

 0.98. Size:1887K  mdd
 ao3401.pdf

AO3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 44m @-10V 1. GATE -4.2A -30V 2. SOURCE 51m @4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load/Power Switching High dense cell design for extremely low RDS(ON) Interfacing Switching Exceptional on-resistance and maximum DC current capability MARKING Equivalen

 0.99. Size:573K  msksemi
 ao3401mi-ms.pdf

www.msksemi.com AO3401MI-MS Semiconductor Compiance FEATURE SOT-23-3 3 High dense cell design for extremely low R . DS(ON) Exceptional on-resistance and maximum DC currentcapability 1. GATE 1 2 APPLICATION 2. SOURCE Load/Power Switching 3. DRAIN Interfacing Switching Equivalent Circuit I V(BR)DSS RDS(on)MAX D 65m @-10V 75m @-4.5V -30 V -4.2A 90m @-2.5V

 0.100. Size:988K  cn szxunrui
 si3401.pdf

SOT-23 Plastic-Encapsulate MOSFETS SI3401 P-Channel 30-V(D-S) MOSFET SI3401 V(BR)DSS RDS(on)MAX ID SOT-23 0.060 @-10V 3 -30V 0.070 @-4.5V 1.GATE -4.0A 2.SOURCE 0.100 @-2.5V 3.DRAIN 1 2 MARKING Equivalent Circuit General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package A11TF w APPLICATION *w week code Load Switch for Porta

 0.101. Size:3580K  pjsemi
 pjm3401psc.pdf

PJM3401PSC P-Channel Power MOSFET SOT-23-3 Features VDS= -30V I = -4.5A D RDS(ON)= 60m (max) @-10V 2 Halogen and Antimony Free 3 1 Applications 1. Gate 2.Source 3.Drain Load Switch and in PWM Applications Marking P1 Schematic Diagram Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Valu

 0.102. Size:2604K  pjsemi
 pjm3401psa.pdf

PJM3401PSA P-Enhancement Field Effect Transistor Features SOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation 1. Gate 2.Source 3.Drain Marking R1 Applications Schematic Diagram Power switching application Drain 3 Hard switched and high frequency circuits Unint

 0.103. Size:757K  cn salltech
 sr3401.pdf

Leading Circuit Protection Products and Solutions SR3401 30V P-Channel MOSFET Product Summary SOT-23 V(BR)DSS RDS(on)MAX ID 65m @-10V D -30V 75m @-4.5V -4.2A 90m @-2.5V G Feature S TrenchFET Power MOSFET Schematic diagram Exceptional on-resistance and maximum DC current capability Application D DC/DC Converter Load Switch for Portable Devices Battery S

 0.104. Size:1425K  cn puolop
 ao3401.pdf

AO3401 -30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V DS(ON) gs@-10V, I ds@-4.2A

 0.105. Size:882K  cn agmsemi
 agm3401e.pdf

AGM3401E General Description Product Summary The AGM3401E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 43.5m -4.4A Features SOT23-3 Pin Configuration Advance high cell density Trench technology Low R to m

 0.106. Size:453K  cn shikues
 ao3401.pdf

P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature SC-59 -30V/-4.2A, RDS(ON) =55m (MAX) @VGS = -10V. = RDS(ON) = 70m (MAX) @VGS = -4.5V. GS RDS(ON) =120m (MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package Applications

 0.107. Size:607K  wpmtek
 wtm3401.pdf

WTM3401 -30V/-4.2A P Channel Advanced Power MOSFET Features V R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V -3.3V Logic Level Control 55m @-10V P Channel SOT23 Package -30V -4.2A 65m @ -4.5V Pb-Free, RoHS Compliant Applications Load Switch Switching circuits High-speed line driver Power Management Functions Order Information

 0.108. Size:1599K  cn yongyutai
 ao3401.pdf

AO3401 P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-3L 90 m @-4.5V -20V A -3 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET z z Load Switch for Portable Devices z DC/DC Converter MARKING A19T Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source V

 0.109. Size:1377K  cn alj
 ao3401.pdf

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS AO3401 P-Channel Enhancement Mode Field Effect Transistor Features V (V) = -30V DS = -4.2 A (V = -10V) ID GS R

 0.110. Size:912K  cn tuofeng
 tf3401.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3401 P-Channel 30-V(D-S) MOSFET TF3401 V(BR)DSS RDS(on)MAX ID SOT-23 0.060 @-10V 3 -30V 0.070 @-4.5V 1.GATE -4.0A 2.SOURCE 0.100 @-2.5V 3.DRAIN 1 2 MARKING Equivalent Circuit General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package A11TF w AP

 0.111. Size:947K  cn twgmc
 ao3401.pdf

SI2305 AO3401 AO3401 AO3401 SOT-23 Plastic-Encapsulate MOSFETS FEATURES

 0.112. Size:1030K  winsok
 wst3401.pdf

WST3401 P-Ch MOSFET General Description Product Summery The WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5A for most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full

 0.113. Size:1456K  winsok
 wst3401a.pdf

WST3401A P-Ch MOSFET General Description Product Summery The WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0A gate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu

 0.114. Size:372K  cn sino-ic
 se3401.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE3401 -4.2A,-30V P-Channel MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide VDS (V) =-30V the best combination of fast switching, low ID =-4.2A (VGS = -10V) on-resistance and cost-effectiveness. RDS(ON)

 0.115. Size:628K  cn sino-ic
 se3401b.pdf

SHANGHAI Jan 2015 MICROELECTRONICS CO., LTD. SE3401B -2.8A,-20V P-Channel MOSFET Revision A General Description Features ID =-2.8A The MOSFETs from SINO-IC provide VDS (V) =-20V the best combination of fast switching, low RDS(ON)

 0.116. Size:9601K  cn sps
 sm3401.pdf

SM3401 Features Schematic diagram SOT-23 Top View G D S PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 52@ VGS = -10V 65@ VGS = -4.5V -30V -4.4A 85 @ VGS =- 2.5V Ordering Information Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 SM3401SR G SM3401SR L SOT-23 G S D Tape Reel SM3401 X X X (1) S SOT-23 (1)Packa

 0.117. Size:867K  cn vbsemi
 ao3401.pdf

AO3401 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

 0.118. Size:866K  cn vbsemi
 ao3401a.pdf

AO3401A www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

 0.119. Size:1084K  cn vbsemi
 ge3401.pdf

GE3401 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

 0.120. Size:868K  cn vbsemi
 am3401e3vr.pdf

AM3401E3VR www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-

 0.121. Size:642K  cn yangzhou yangjie elec
 yjl3401a.pdf

RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s

 0.122. Size:975K  cn wuxi unigroup
 ttx3401a.pdf

TTX3401A Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =-10V) -4A Low Gate Charge& RDS(ON) (at VGS =-10V)

 0.123. Size:547K  cn hmsemi
 hm3401.pdf

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 0.124. Size:588K  cn hmsemi
 hm3401d.pdf

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)

 0.125. Size:560K  cn hmsemi
 hm3401c.pdf

HM3401C P-Channel Enhancement Mode Power MOSFET Description D The HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)

 0.126. Size:459K  cn hmsemi
 hm3401b.pdf

HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 0.127. Size:929K  cn hmsemi
 hm3401pr.pdf

HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)

 0.128. Size:967K  cn minos
 ao3401s.pdf

Description The AO3401S combines advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features VDS= -30V, ID= -4.2A Schematic Diagram RDS(ON)typ. =45m @VDS=-10V RDS(ON)typ. =51m @VDS=-4.5V RDS(ON)typ. =65m @VDS=-2.5V Low gate

 0.129. Size:283K  cn haohai electr
 hpm3401.pdf

HPM3401 P-Channel MOSFETs -3.8A,-30V P P HPM3401 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -3.8A, RDS(ON)=50m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead f

 0.130. Size:282K  cn haohai electr
 hpm3401a.pdf

HPM3401A P-Channel MOSFETs -4.2A,-30V P P HPM3401A P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -4.2A, RDS(ON)=53m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Le

 0.131. Size:354K  pn silicon
 pm3401.pdf

PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON) This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON

 0.132. Size:1360K  cn apm
 ap3401ai.pdf

AP3401AI -30V P-Channel Enhancement Mode MOSFET Description The AP3401AI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS D R

 0.133. Size:1754K  cn apm
 ap3401mi.pdf

AP3401MI 30V P-Channel Enhancement Mode MOSFET Description The AP3401MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS D R