GOFORD3401DESCRIPTION DThe 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)mm m 50 -4.2

3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 V(BR)DSS RDS(ON)MAX ID 65m@-10V SOT-23 Plastic-Encapsulate MOSFET 30V 75m@-4.5V -4.2A Features 90m@-2.5V SOT-23 High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing

Pb Free Producthttp://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30

Ordering number:ENN6443N-Channel Silicon MOSFETMCH3401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 2.5V drive.[MCH3401]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings

GaAs HJ-FET L TO S BANDLOW NOISE AMPLIFIERNE34018(New Plastic Package)NOISE FIGURE & ASSOCIATEDFEATURESGAIN vs. FREQUENCYVDS = 3 V, IDS = 20 mA LOW COST MINIATURE PLASTIC PACKAGE252544(SOT-343)2020 LOW NOISE FIGURE:GA0.6 dB typical at 2 GHz151533 HIGH ASSOCIATED GAIN:101016.0 dB typical at 2 GHz LG = 0.6 2 5m, WG

DMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMa

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp

SMG3401-4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETA suffix of "-C" specifies halogen & lead-freeASC-59DescriptionLDim Min MaxThe SMG3401 uses advanced trench technology 3A 2.70 3.10SBTop Viewto provide excellent on-resistance extremely 2 1B 1.40 1.60efficient and cost-effectiveness device. C 1.00 1.30The

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 50m@-10V-30V -4.2A60 m@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING: R1 G S Maximum ratings ( Ta=25 unless otherwise noted

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m@-10V60 -30V 70 m -4.2A@-4.5Vm@-2.5V851. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m@-10V60-30V 70 m -4.2A@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi

MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3401-HF (P-Channel )Reverse Voltage: - 30 VoltsForward Current: - 4.2 ARoHS DeviceHalogen FreeSOT-23Features0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 30.055(1.40) - Exceptional on-resistance and miximum DC current0.047(1.20)capability.1 20.079(2.00)0.071(1.80)Me

AO340130V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3401SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET

AO3401P-Channel 30V(D-S) MOSFETDESCRIPTION DThe AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)

WTC34013 DRAINP-Channel Enhancement DRAIN CURRENTMode Power MOSFET -4.2 AMPERESDRAIN SOURCE VOLTAGE1-30 VOLTAGEGATE2SOURCE3Features:*Advanced trench process technology1 *High Density Cell Design For Ultra Low 2On-ResistanceSOT-23Maximum Ratings(TA=25 Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage -30 VDSV Gate-Source Vo

FM120-MWILLASTHRUSE340 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

AO340130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

AO3401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401A uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0Agate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V)

AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105@VGS=-2.5V These devices are particularly suited for lo

AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m@VGS=-2.5V These devices are particularly suited fo

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401AO3401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2017.06.19 Page No. : 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3401N3 ID@VGS=-10V, TA=25C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m(typ)RDS(ON)@VGS=-4.5V, ID=-4A 51m(typ)RDS(ON)@VGS=-2.5V, ID=-1A 59m(typ)Features Advanced trench process technology High density c

GOFORD3401LDescription DThe 3401L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)mm m 50 -4.2

GOFORD3401ADescription The 3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) (Typ)10V -30V58m 85 m 45 m

GrerrPPrPrProSTS3401AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.79 @ VGS=-10VSuface Mount Package.-30V -3.2A127 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXI

GreenProductS TS 3401S amHop Microelectronics C orp.J un.15 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.75 @ VG S = -10V-30V -3AS OT-23 Package.100 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-3 Plastic-Encapsulate Transistors 3401 MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source volta

BRCS3401MC Rev. B Dec.-2018 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

AO3401 Rev.A Aug.-2016 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

MMFTP3401 P-Channel Enhancement Mode MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic PackageAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage -VDS 30 VGate-Source Voltage VGS 12 VDrain Current T = 25 4 A-ID A 3.2 T = 70 APeak Drain Current 1) -IDM 27 APower Dissipation 2) T = 25A1.4 PD W 0.9 T = 70AJunction and St

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)

SM3401NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Com

Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (

SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)

SMD Type MOSFETP-Channel Enhancement MOSFETAO3401 HF (KO3401 HF)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain A

SMD Type MOSFETP-Channel Enhancement MOSFET KO3401 SOT-89Unit:mm Features1.70 0.1 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 65m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V)D0.42 0.1 RDS(ON) 120m (VGS =-2.5V) 0.46 0.11.GateG2.DrainS3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain Absolu

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings T

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4 A (VGS =-10V)1 2 RDS(ON) 50m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 60m (VGS =-4.5V)1.9 -0.2 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum R

PPJA3401 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -30 V Current -3.6A Features RDS(ON) , VGS@-10V, ID@-3.6A

PPJA3401A 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -30 V Current -3.6A Features RDS(ON) , VGS@-10V, ID@-3.6A

AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement -30V/-4.3A, R =47m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =55m(typ.)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2.5A, R =70m(typ.

Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -4.4A DS DR

Pb Free Product BLM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

Single P-channel MOSFETELM53401CA-SGeneral description Features ELM53401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.8A resistance. Rds(on)

Single P-channel MOSFETELM33401CA-SGeneral description Features ELM33401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de

-4.0A-30V3401P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA3401 uses advanced trench technology to provide excellent R ,lowgate chargeDS(on)and operation with gate voltages as lowas 2.5V.This device is suitable for use as a load switch or in PWMapplications.Standard Product KIA3401 is Pb-free(meets ROHS & Sony 259 specificatio

MMP3401Package Level Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal C

Pb Free Producthttp://www.ncepower.com NCE3401ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.4A Schematic

Pb Free Producthttp://www.ncepower.com NCE3401NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID

http://www.ncepower.com NCE3401BYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

Pb Free Producthttp://www.ncepower.com NCE3401YNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3401Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,

http://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

Pb Free Producthttp://www.ncepower.comNCE3401ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3401E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.It is ESD protested.General Features V = -30V,I = -4.4ADS D

SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle

STP3401A -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m(typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m(typ.)@VGS =-2.5V technology to provide exc

STP3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ.)@VGS =-2.5V provide exce

SL3401ASOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com4

SL3401P-Channel Power MOSFET DGeneral Features G VDS = -30V,ID = -4.1A RDS(ON)

SL3401SP-Channel Power MOSFET DGeneral Features G VDS = -30V,ID = -4A RDS(ON)

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

RUMWpeUMW AO3401AUMW AO3401AM SFETSMD TyP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) RDS(ON) 120m (VGS =-2.5V)1. GATE 2. SOURCE 3. DRAIN DGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V

P-Channel MOSFET AS3401SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: X 1 or B 1Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -30 VDSS

ASDM3401ZB-30V P-CHANNEL MOSFETFEATURES Product Summary High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability V DS -30 VR DS(on),Max@ VGS=-10 V 65 mApplication I D -4.2 APWM applications Load switch Power management top viewD G S SOT-23 Maximum ratings ( Ta=25 unless otherwise noted)

AO3401AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +12Drain Current (continuous)I -4.2 ADDrain Current (pulsed) I ADM-18Total Device D

Eternal Semiconductor Inc. EV3401P-Channel Enhancement-Mode MOSFET (-30V, -4.2A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.53 @ VGS = -10 V,ID=-4.2A-30V -4.2A 64 @ VGS = -4.5V,ID=-4.0A86 @ VGS = -2.5V,ID=-1.0AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeEV3401 Pin Assignm

GP3401 30V P-Channel MOSFET Product Summary SOT-23 V R I (BR)DSS DS(on)MAX D65m@-10V D-30V 75m@-4.5V -4.2A 90m@-2.5V GFeature S TrenchFET Power MOSFET Schematic diagram Exceptional on-resistance and maximum DC current capability Application D DC/DC Converter Load Switch for Portable Devices Battery Switch GMARKING: SABSOLUTE

Plastic-Encapsulate MosfetsAO3401P-Channel MOSFETFEATURESHigh dense cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capabilityD 1.Gate2.SourceSOT-233.DrainG S MARKING:A19TMaximum ratings ( Ta=25 unless otherwise noted) UnitParameter Symbol Value Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 12 VContinuous

HSS3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DSThe HSS3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON R 53 m DS(ON),maxand efficiency for most of the small power switching and load switch applications. I -4.3 A DThe HSS3401A meet the RoHS and Green Product requirement with full function reliabili

AO3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The AO3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 54 m and efficiency for most of the small power switching and load switch applications. ID -4.2 A The AO3401A meet the RoHS and Green Product requirement with full function reliability approv

SOT-23-3 Plastic-Encapsulate Transistors HX3401MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18VMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage 12 V ID Drain current -4.2 A PD Power Dissipation 1.2

SOT-23-3Plastic-Encapsulate TransistorsHX3401A MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A19TMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHA

JMTL3401A Description JMT P-channel MOSFET Features Application V =-30V, I =-4.2A PWM Applications DS D R

SE3401P-Channel Enhancement Mode Power MOSFET Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Batt

JST3401-30V,-4.2AP-Channel MosfetFEATURESSOT-23RDS(ON) 63m @VGS=-10VRDS(ON) 67m @VGS=-4.5VRDS(ON) 85m @VGS=-2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingP-CHANNEL MOSFETMARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -30VGate-Source Voltage V 12GSI -4.2DContinuou

JSM3401LP-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.053@-10V3-30V 0.065@-4.5V 1.GATE-4.2A2.SOURCE0.085@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA19TF wAPPLICATION*wweek codeLoad Switch for Portable DevicesDC/DC ConverterMaximu

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

AO3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 44m@-10V 1. GATE -4.2A -30V 2. SOURCE 51m@4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load/Power Switching High dense cell design for extremely low RDS(ON) Interfacing SwitchingExceptional on-resistance and maximum DC current capabilityMARKING Equivalen

www.msksemi.comAO3401MI-MSSemiconductor CompianceFEATURESOT-23-33 High dense cell design for extremely low R .DS(ON) Exceptional on-resistance and maximum DC currentcapability1. GATE 12APPLICATION2. SOURCE Load/Power Switching3. DRAIN Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D65m@-10V75m@-4.5V-30 V-4.2A90m@-2.5V

SOT-23 Plastic-Encapsulate MOSFETSSI3401P-Channel 30-V(D-S) MOSFETSI3401V(BR)DSS RDS(on)MAX IDSOT-230.060@-10V3-30V 0.070@-4.5V 1.GATE-4.0A2.SOURCE0.100@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA11TF wAPPLICATION*wweek codeLoad Switch for Porta

PJM3401PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -30V I = -4.5AD RDS(ON)= 60m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: P1Schematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Valu

PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint

Leading Circuit ProtectionProducts and SolutionsSR340130V P-Channel MOSFETProduct SummarySOT-23V(BR)DSS RDS(on)MAX ID65m@-10VD-30V 75m@-4.5V -4.2A90m@-2.5VGFeatureS TrenchFET Power MOSFETSchematic diagram Exceptional on-resistance and maximum DC current capabilityApplication D DC/DC Converter Load Switch for Portable Devices Battery S

AO3401 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature SC-59 -30V/-4.2A, RDS(ON) =55m(MAX) @VGS = -10V. = RDS(ON) = 70m(MAX) @VGS = -4.5V. GS RDS(ON) =120m(MAX) @VGS = -2.5V. GSSuper High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package Applications

WTM3401-30V/-4.2A P Channel Advanced Power MOSFETFeaturesV R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V -3.3V Logic Level Control55m @-10V P Channel SOT23 Package -30V -4.2A 65m @ -4.5V Pb-Free, RoHS CompliantApplications Load Switch Switching circuits High-speed line driver Power Management Functions Order Information

AO3401P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-3L90 m@-4.5V-20VA-3110 m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING : A19T Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source V

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF3401P-Channel 30-V(D-S) MOSFETTF3401V(BR)DSS RDS(on)MAX IDSOT-230.060@-10V3-30V 0.070@-4.5V 1.GATE-4.0A2.SOURCE0.100@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA11TF wAP

SI2305AO3401AO3401AO3401SOT-23 Plastic-Encapsulate MOSFETS FEATURES

WST3401 P-Ch MOSFETGeneral Description Product SummeryThe WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5Afor most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full

WST3401A P-Ch MOSFETGeneral Description Product SummeryThe WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0Agate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE3401 -4.2A,-30V P-Channel MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide VDS (V) =-30V the best combination of fast switching, low ID =-4.2A (VGS = -10V) on-resistance and cost-effectiveness. RDS(ON)

SHANGHAI Jan 2015 MICROELECTRONICS CO., LTD. SE3401B-2.8A,-20V P-Channel MOSFET Revision:A General Description Features ID =-2.8AThe MOSFETs from SINO-IC provide VDS (V) =-20V the best combination of fast switching, low RDS(ON)

SM3401Features Schematic diagram SOT-23Top ViewGDSPRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 52@ VGS = -10V65@ VGS = -4.5V -30V -4.4A 85 @ VGS =- 2.5V Ordering Information Ordering Number Pin AssignmentPackage PackingLead Free Halogen Free 1 2 3 SM3401SR GSM3401SR L SOT-23 G S D Tape ReelSM3401 X X X (1) SSOT-23(1)Packa

AO3401www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

AO3401Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

GE3401www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

AM3401E3VRwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s

TTX3401A Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =-10V) -4A Low Gate Charge& RDS(ON) (at VGS =-10V)

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)

HM3401CP-Channel Enhancement Mode Power MOSFET Description DThe HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)

HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)

PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON