6760 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 6760
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037(0.064) Ohm
Paquete / Cubierta: SOP8
6760 Datasheet (PDF)
6760.pdf

GOFORD6760Description The 6760 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDSS RDS(ON) IDSchematic diagram @10V (typ) 60V 37m 6Ap channel VDSS RDS(ON) ID @10V (typ)-60V 64m - 5.8AMarking and pin assignment High density c
2n6760 irf330.pdf

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces
fdd6760a.pdf

January 2009FDD6760AN-Channel PowerTrench MOSFET 25 V, 3.2 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 Asynchronous or conventional switching PWM controllers. It has been
Otros transistores... 2301 , 2302 , 3035 , 3400 , 3401 , 3415 , 6616 , 6703 , IRF3205 , 7080 , 8070 , 8680 , G29 , G33 , G37 , G3N15 , G50N10 .
History: HAT2077R
History: HAT2077R



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