6760 Datasheet. Equivalente

 ..1. Size:2720K  goford
 6760.pdf

GOFORD 6760 Description The 6760 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 60V 37m 6A p channel VDSS RDS(ON) ID @ 10V (typ) -60V 64m - 5.8A Marking and pin assignment High density c

 0.1. Size:146K  international rectifier
 2n6760 irf330.pdf

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

 0.2. Size:323K  fairchild semi
 fdd6760a.pdf

January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been

 0.3. Size:138K  fairchild semi
 2n6759 2n6760.pdf

 0.4. Size:313K  aosemi
 aon6760.pdf

AON6760 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 0.5. Size:287K  inchange semiconductor
 fdd6760a.pdf

isc N-Channel MOSFET Transistor FDD6760A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =3.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid