6760 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 6760
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037(0.064) Ohm
Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET 6760

6760 Datasheet (PDF)

..1. Size:2720K goford
6760.pdf

GOFORD6760Description The 6760 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDSS RDS(ON) IDSchematic diagram @10V (typ) 60V 37m 6Ap channel VDSS RDS(ON) ID @10V (typ)-60V 64m - 5.8AMarking and pin assignment High density c

0.1. Size:146K international rectifier
2n6760 irf330.pdf

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

0.2. Size:323K fairchild semi
fdd6760a.pdf

January 2009FDD6760AN-Channel PowerTrench MOSFET 25 V, 3.2 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 Asynchronous or conventional switching PWM controllers. It has been

0.3. Size:138K fairchild semi
2n6759 2n6760.pdf

0.4. Size:313K aosemi
aon6760.pdf

AON676030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

0.5. Size:287K inchange semiconductor
fdd6760a.pdf

isc N-Channel MOSFET Transistor FDD6760AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =3.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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