6760 Specs and Replacement
Type Designator: 6760
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037(0.064) Ohm
Package: SOP8
6760 substitution
- MOSFET ⓘ Cross-Reference Search
6760 datasheet
6760.pdf
GOFORD 6760 Description The 6760 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDSS RDS(ON) ID Schematic diagram @ 10V (typ) 60V 37m 6A p channel VDSS RDS(ON) ID @ 10V (typ) -60V 64m - 5.8A Marking and pin assignment High density c... See More ⇒
2n6760 irf330.pdf
PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
fdd6760a.pdf
January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been ... See More ⇒
Detailed specifications: 2301 , 2302 , 3035 , 3400 , 3401 , 3415 , 6616 , 6703 , IRF3205 , 7080 , 8070 , 8680 , G29 , G33 , G37 , G3N15 , G50N10 .
Keywords - 6760 MOSFET specs
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