G33 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORDG33DESCRIPTION DThe G33 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)G33-18V37m 51m -4.8 A High Po

GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

December 2008FDG332PZtmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VG

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS

SiHG33N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.098 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 155 Low input capacitance (Ciss)Qgs (nC) 22 Reduced s

SiHG33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS

July 2007FDG332PZ tmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VGS =

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180

GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

SCG3350 PNP PCM Ta=25 3002 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.01mA 60 V V(BR)CEO ICE=0.01mA 45 V V(BR) EBO IEB=0.01mA 6.0 V ICBO VCB=30V 0.01 A ICEO VCE=30V 0.1 A IEBO VEB=3V 0.1 A VBEsat 0.9 IC=10mA

3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V

2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating Uni

2SC3357(3DG3357) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. :,, Features: Low noise and high gain, large P in small package. C/Absolute maximum ratings(Ta=25)

2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55150 stg /Electrical ch

2SC3355(3DG3355) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating U

90A30VKNX3303AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSEMICONDUCTORSS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m

2SC3330(3DG3330) NPN /SILION NPN TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V