G33 Todos los transistores

 ..1. Size:1781K  goford
 g33.pdf

GOFORD G33 DESCRIPTION D The G33 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G33 -18V 37m 51m -4.8 A High Po

 0.1. Size:566K  1
 g33n03d3.pdf

GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

 0.2. Size:216K  fairchild semi
 fdg332pz.pdf

December 2008 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VG

 0.3. Size:150K  fairchild semi
 fdg330p.pdf

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS

 0.4. Size:176K  vishay
 sihg33n60ef.pdf

SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.098 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 155 Low input capacitance (Ciss) Qgs (nC) 22 Reduced s

 0.5. Size:147K  vishay
 sihg33n60e.pdf

SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS

 0.6. Size:566K  onsemi
 fdg332pz.pdf

July 2007 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VGS =

 0.7. Size:148K  no
 ecg32x ecg33x ecg34x.pdf

 0.8. Size:112K  jiangsu
 3dg3332.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage 2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180

 0.9. Size:566K  goford
 g33n03d3.pdf

GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

 0.10. Size:240K  china
 scg3350.pdf

SCG3350 PNP PCM Ta=25 300 2 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.01mA 60 V V(BR)CEO ICE=0.01mA 45 V V(BR) EBO IEB=0.01mA 6.0 V ICBO VCB=30V 0.01 A ICEO VCE=30V 0.1 A IEBO VEB=3V 0.1 A VBEsat 0.9 IC=10mA

 0.11. Size:111K  china
 3dg3399.pdf

3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V

 0.12. Size:161K  china
 3dg3356.pdf

2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR Purpose low noise amplifier at VHF, UHF and CATV band applications. Features Low noise and high power gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating Uni

 0.13. Size:202K  foshan
 3dg3357.pdf

 0.14. Size:314K  foshan
 3dg3326.pdf

2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR /Purpose For muting and switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55 150 stg /Electrical ch

 0.15. Size:174K  foshan
 3dg3355.pdf

2SC3355(3DG3355) NPN /SILICON NPN TRANSISTOR Purpose low noise amplifier at VHF, UHF and CATV band applications. Features Low noise and high power gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating U

 0.16. Size:303K  kia
 kng3303a kny3303a.pdf

90A 30V KNX3303A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTOR SEMICONDUCTOR S S 1.Description This Power MOSFET is produced using KIA s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m

 0.17. Size:291K  lzg
 3dg3330.pdf

2SC3330(3DG3330) NPN /SILION NPN TRANSISTOR Purpose Capable of being used in the low frequency to high frequency range. /Features Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V