GOFORDG33DESCRIPTION DThe G33 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)G33-18V37m 51m -4.8 A High Po

GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

December 2008FDG332PZtmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VG

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS

SiHG33N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.098 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 155 Low input capacitance (Ciss)Qgs (nC) 22 Reduced s

SiHG33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS

July 2007FDG332PZ tmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VGS =

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180

GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

SCG3350 PNP PCM Ta=25 3002 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.01mA 60 V V(BR)CEO ICE=0.01mA 45 V V(BR) EBO IEB=0.01mA 6.0 V ICBO VCB=30V 0.01 A ICEO VCE=30V 0.1 A IEBO VEB=3V 0.1 A VBEsat 0.9 IC=10mA

3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V

2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating Uni

2SC3357(3DG3357) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. :,, Features: Low noise and high gain, large P in small package. C/Absolute maximum ratings(Ta=25)

2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55150 stg /Electrical ch

2SC3355(3DG3355) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating U

90A30VKNX3303AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSEMICONDUCTORSS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m

2SC3330(3DG3330) NPN /SILION NPN TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V