G50N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORDG50N10Description The G50N10 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @4.5V (Typ) @10V (Typ)100V 15 m 14 m 50A High density cell design for ultra low Rdson Fully characterized

JNG50N120QFU1 IGBT Features 1200V,50A V =2.4V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs

JNG50N120LS IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and o

JNG50N120FLU1 IGBT Features 1200V,50A V =2.5V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs

JNG50N120QS1 IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description TO-247-3L Plus JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, gene