Справочник MOSFET. G50N10

 

G50N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: G50N10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 950 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: TO220

 Аналог (замена) для G50N10

 

 

G50N10 Datasheet (PDF)

 ..1. Size:907K  goford
 g50n10.pdf

G50N10 G50N10

GOFORDG50N10Description The G50N10 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) IDSchematic diagram @4.5V (Typ) @10V (Typ)100V 15 m 14 m 50A High density cell design for ultra low Rdson Fully characterized

 9.1. Size:539K  jiaensemi
 jng50n120qfu1.pdf

G50N10 G50N10

JNG50N120QFU1 IGBT Features 1200V,50A V =2.4V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs

 9.2. Size:1079K  jiaensemi
 jng50n120ls.pdf

G50N10 G50N10

JNG50N120LS IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and o

 9.3. Size:668K  jiaensemi
 jng50n120flu1.pdf

G50N10 G50N10

JNG50N120FLU1 IGBT Features 1200V,50A V =2.5V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs

 9.4. Size:938K  jiaensemi
 jng50n120qs1.pdf

G50N10 G50N10

JNG50N120QS1 IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description TO-247-3L Plus JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, gene

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History: STS2300S

 

 
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