05N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORD05N06Description The 05N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)60V m 38 4.5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current L

SIL05N06Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum RatingsOperating Junction Temperature Rang

N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech

NPN NPN LOW Vce(sat) TRANSISTOR RBM05N06B MAIN CHARACTERISTICS Package I 5A CV 60V CEOP 550mW C APPLICATIONS Switching and muting Battery charger Supply line switching circuits motor drivers SOT-89 FE

N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology

CRTD105N06L() Trench N-MOSFET 60V, 8.5m, 64AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID64A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

SL05N06ZProduct SummaryFeatures Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m@10VD260V S1 5AD1 Low reverse transfer capacitance150m@4.5V Fast switching capability Avalanche energy specifiedApplicationD Power switching applicationSDGDSOT-89 top viewSchematic diagram05N06Z: Device code

SL05N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 5.0AD R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Powe

RoHS COMPLIANT YJL05N06AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V = 10V) 44mohm DS(ON) GS R ( at V = 4.5V) 49mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON)Applications PWM application Load switch Absolut

TTB105N06A,TTP105N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 105A Low Gate Charge RDS(ON) (at VGS =10V)