05N06 Datasheet. Equivalente

 ..1. Size:1714K  goford
 05n06.pdf

GOFORD 05N06 Description The 05N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 60V m 38 4.5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current L

 0.1. Size:734K  mcc
 sil05n06.pdf

SIL05N06 Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" N-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Power MOSFET Maximum Ratings Operating Junction Temperature Rang

 0.2. Size:1562K  jilin sino
 jt05n065rad jt05n065vad jt05n065sad.pdf

N N-CHANNEL IGBT R JT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15V APPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech

 0.3. Size:870K  jilin sino
 bm05n06b.pdf

NPN NPN LOW Vce(sat) TRANSISTOR R BM05N06B MAIN CHARACTERISTICS Package I 5A C V 60V CEO P 550mW C APPLICATIONS Switching and muting Battery charger Supply line switching circuits motor drivers SOT-89 FE

 0.4. Size:2071K  jilin sino
 jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf

N N-CHANNEL IGBT R JT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V Vcesat Vge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology

 0.5. Size:530K  crhj
 crtd105n06l.pdf

CRTD105N06L ( ) Trench N-MOSFET 60V, 8.5m , 64A Features Product Summary VDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID 64A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Aval

 0.6. Size:734K  slkor
 sl05n06z.pdf

SL05N06Z Product Summary Features Excellent package for good heat dissipation VDS RDS(ON) MAX ID MAX Ultra low gate charge 100m @10V D2 60V S1 5A D1 Low reverse transfer capacitance 150m @4.5V Fast switching capability Avalanche energy specified Application D Power switching application S D G D SOT-89 top view Schematic diagram 05N06Z Device code

 0.7. Size:974K  slkor
 sl05n06a.pdf

SL05N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Powe

 0.8. Size:1256K  cn yangzhou yangjie elec
 yjl05n06al.pdf

RoHS COMPLIANT YJL05N06AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 5.0A D R ( at V = 10V) 44mohm DS(ON) GS R ( at V = 4.5V) 49mohm DS(ON) GS General Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) Applications PWM application Load switch Absolut

 0.9. Size:653K  cn wuxi unigroup
 ttb105n06a ttp105n06a.pdf

TTB105N06A,TTP105N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 105A Low Gate Charge RDS(ON) (at VGS =10V)