05N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: 05N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2.3 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: SOP8
05N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
05N06 Datasheet (PDF)
1.1. 05n06.pdf 
Size:1714K _goford
GOFORD 05N06 Description The 05N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 60V m 38 Ω 4.5A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● L
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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