05N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: 05N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2.3 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: SOP8
05N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
05N06 Datasheet (PDF)
1.1. 05n06.pdf 
Size:1714K _goford
GOFORD 05N06 Description The 05N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 60V m 38 Ω 4.5A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● L
Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
