05N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: 05N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2.3 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: SOP8
05N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
05N06 Datasheet (PDF)
1.1. 05n06.pdf 
Size:1714K _goford
GOFORD 05N06 Description The 05N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 60V m 38 Ω 4.5A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● L
Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .
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MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |