All MOSFET. 05N06 Datasheet

 

05N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 05N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.3 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: SOP8

05N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

05N06 Datasheet (PDF)

1.1. 05n06.pdf Size:1714K _goford

05N06
05N06

GOFORD 05N06 Description The 05N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 60V m 38 Ω 4.5A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● L

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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