100P03 Todos los transistores

 ..1. Size:3160K  goford
 100p03.pdf

GOFORD 100P03 Features Pin Description VDSS RDS(ON) RDS(ON) ID D D @ (Typ) @ D -4.5V -10V (Typ) D -30V m m A 3.1 2.2 -100 G S S S DFN5x6-8 Super High Dense Cell Design Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available D D D D (RoHS Compliant) HBM ESD Capability level of 6.6KV typical Note The diode connected between the gate and source

 0.1. Size:646K  1
 hsba100p03.pdf

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 0.2. Size:2466K  1
 cjac100p03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

 0.3. Size:187K  rohm
 rrh100p03.pdf

4V Drive Pch MOSFET RRH100P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Each lead has same dimensions Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (p

 0.4. Size:195K  infineon
 ipb100p03p3l-04 ipi100p03p3l-04 ipp100p03p3l-04.pdf

IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS -P Trench Power-Transistor Product Summary V -30 V DS Features R (SMD version) 4 m DS(on),max P-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified I -100 A D MSL1 up to 260 C peak reflow PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 175 C operating temperature Green package (RoHS Comp

 0.5. Size:126K  utc
 utt100p03.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an

 0.6. Size:2466K  jiangsu
 cjac100p03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

 0.7. Size:1091K  way-on
 wmb100p03ts.pdf

WMB100P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMB100P03TS uses advanced power trench technology that has D D D D D D D D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. ss s ss G s Features PDFN5060-8L V = -30V, I = -100A DS D R

 0.8. Size:1549K  huashuo
 hsu100p03.pdf

HSU100P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 4 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSU100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

 0.9. Size:646K  huashuo
 hsba100p03.pdf

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 0.10. Size:1371K  jiejie micro
 jmtk100p03a.pdf

-30V,-55A, 8.9m P-channel Power Trench MOSFET JMTK100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -55 A Applications RDS(ON)_Typ(@VGS=-10V 6.1 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 8.9 mW PWM Applica

 0.11. Size:1355K  jiejie micro
 jmtq100p03a.pdf

-30V,-40A, 9.3m P-channel Power Trench MOSFET JMTQ100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -40 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 6.4 mW RDS(ON)_Typ(@VGS=-4.5V 9.3 mW Applications Load Swi

 0.12. Size:1300K  jiejie micro
 jmtg100p03a.pdf

-30V,-45A, 9.3m P-channel Power Trench MOSFET JMTG100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -45 A RDS(ON)_Typ(@VGS=-10V 6.5 mW Applications RDS(ON)_Typ(@VGS=-4.5V 9.3 mW Load Switch PWM Applica

 0.13. Size:1105K  cn vbsemi
 vbze100p03.pdf

VBZE100P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.005 at VGS = - 10 V -110 RoHS* - 30 COMPLIANT 0.007 at VGS = - 4.5 V -90 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit

 0.14. Size:294K  cn vbsemi
 rrh100p03.pdf

RRH100P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P

 0.15. Size:877K  cn hmsemi
 hm100p03.pdf

HM100P03 Description The HM100P03 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -100A RDS(ON)

 0.16. Size:641K  cn hmsemi
 hm100p03k.pdf

H Description The HM100P03K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -100A RDS(ON)

 0.17. Size:1150K  cn apm
 ap100p03d.pdf

AP100P03D -30V P-Channel Enhancement Mode MOSFET Description The AP100P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-100A DS D R